WASEDA UNIVERSITY
              
 
 
 

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1985

 

1986年

  1. I. Ohdomari, T. Chikyow, H. Kawarada, K. Konuma, M. Kakumu, K. Hashimoto, I. Kimura, K. Yoneda, " Behavior of ion-implanted As atoms in Si during molybdenum disilicide formation," Journal of Applied Physics, 59, 9, 3073-3076 (1986) (DOI: 10.1063/1.336930)
  2. H. Kawarada, T. Ueno, Y. Kunii, S. Horiuchi, I. Ohdomari," HIGH-RESOLUTION ELECTRON MICROSCOPE STUDY OF SILICON ON INSULATOR STRUCTURE GROWN BY LATERAL SOLID PHASE EPITAXY." Japanese Journal of Applied Physics, Part 2, 25, 10, 814-817 (1986 Oct)
  3. H. Kawarada, M. Ishida, J. Nakanishi, I. Ohdomari, S. Horiuchi, "HIGH-RESOLUTION ELECTRON MICROSCOPE STUDY OF THE PtSi-Si(111) INTERFACE." Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties, 54, 5, 729-741, (1986 Nov)