WASEDA UNIVERSITY
              
 
 
 

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1994年

  1. H. Kawarada, T. Tsutsumi, H. Hirayama, A. Yamaguchi, "Dominant free-exciton recombination radiation in chemical vapor deposited diamonds", Applied Physics Letters. 1994;64(4):451-453. 30(DOI: 10.1063/1.111126)
  2. H. Kawarada; M. Aoki; M. Ito,"Enhancement mode metal-semiconductor field effect transistors using homoepitaxial diamonds", Applied Physics Letters. 65(12):1563-1565. 95(1994)(DOI: 10.1063/1.112915)
  3. M. Katoh; M. Aoki; H. Kawarada, "Plasma-enhanced diamond nucleation on Si", Japanese Journal of Applied Physics, Part 2: Letters.  33(2 A):L194-L196. 26(1 February 1994)
  4. H Kawarada; M Aoki; H Sasaki; K Tsugawa, "Characterization of hydrogen-terminated CVD diamond surfaces and their contact properties", Diamond and Related Materials. 3(4-6):961-965. (April 1994)(DOI: 10.1016/0925-9635(94)90309-3)
  5. M. Aoki; H. Kawarada, "Electric properties of metal/diamond interfaces utilizing hydrogen-terminated surfaces of homoepitaxial diamonds", Japanese Journal of Applied Physics, Part 2: Letters. 1994;33(5 B):L708-L711. 47
  6. A. Yamaguchi; S. Yamashita; T. Tsutsumi; H. Kawarada, "Temperature and incident beam-current dependence of dominant free-exciton recombination radiation from high-purity chemical vapor deposition (CVD) diamonds", Japanese Journal of Applied Physics, Part 2: Letters.  33(8 A):L1063-L1065.(1994 Aug 1)