WASEDA UNIVERSITY
              
 
 
 

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1998年

1) K. Tsugawa, H. Noda, A. Hokazono, K. Kitatani, K. Morita, H. Kawarada "Application and device modeling of diamond FET using surface semiconductive layers", Elec. Comm. in Japan Part 2, 81(7), 19-27 (Jul.1998) (DOI:10.1002/(SICI)1520-6432(199807)81:7<19::AID-ECJB3>3.0.CO;2-Y)

2) H. Kawarada, C. Wild, N. Herres, P. Koidll, Y. Mizuochi, A. Hokazono H .Nagasawa "Surface morphology and surface p-channel field effect transistor on the heteroepitaxial diamond deposited on inclined beta-SiC (001) surfaces", Appl. Phys. Lett., 72(15), 1878-1880 (1998) (DOI: 10.1063/1.121213

3) K. Tsugawa, A. Hokazono, H. Noda, K. Kitatani, K. Morita, H. Kawarada "MESFETs and MOSFETs on hydrogen-terminated diamond surfaces", Materials Science Forum, 264-268, 977-980 (Feb.1998) (DOI:10.4028/www.scientific.net/MSF.264-268.977)

4) K. Tsugawa, K. Kitatani, H. Kawarada "Metal-semiconductor field-effect transistors on hydrogen-terminated diamond surfaces", New Diamond and Frontier Carbon Technology, 8(4):289-297. (1998)

5) 川原田洋 "ダイヤモンド電界効果トランジスタの現状と将来", 応用物理, 67, 128 (1998) (解説)