WASEDA UNIVERSITY
              
 
 
 

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2001年

1) K. Nakazawa, K. Tanabe, M. Tachiki, H. Kawarada, S. Koizumi, "Excitonic Recombination Radiation in Hosphorus-doped CVD Diamonds", Phys. Rev. B, 64(23), 235203-1〜235203-6 (15 December 2001)

2) H. Umezawa, H. Taniuchi, T. Arima, M. Tachiki, H. Kawarada, "Potential Applications of Surface Channel Diamond Field-Effect Transistors", Diam. Relat. Mater., 10(9-10), 1743〜1748 (September 2001)(DOI: 10.1016/S0925-9635(01)00406-X

3) K. Tanabe, K. Nakazawa, J. Susantyo, H. Kawarada, S. Koizumi "Cathodoluminescence of Phosphorus doped (111) Homoepitaxial Diamond Thin Films", Diam. Relat. Mater., 10(9-10), 1652〜1654 (September 2001)(DOI: 10.1016/S0925-9635(01)00389-2

4) H. Taniuchi, H. Umezawa, T. Arima, M. Tachiki, H. Kawarada, "High-Frequency Performance of Diamond Field-Effect Transistors", IEEE Electr. Device L., 22(8), 390〜392 (August 2001)(DOI: 10.1109/55.936353

5) N. Taniyama, M. Kudo, O. Matsumoto, H. Kawarada, "Diamond deposition on a large-area substrate by plasma-assisted chemical vapor deposition using an antenna-type coaxial microwave plasma generator", Jpn. J. Appl. Phys., Part2, 40, 7A, L698〜L700 (1 July 2001)

6) K. Tsugawa, H. Umezawa, H. Kawarada, "Characterization of Diamond Surface-Channel Metal-Semiconductor Field-Effect Transistor with Device Simulation", Jpn. J. Appl. Phys., 40, 3101-3107 (2001)

7) H. Kawarada, Y. Araki, T. Sakai, T. Ogawa, H. Umezawa, "Electrolyte-Solution-Gate FETs Using Diamond Surface for Biocompatible Ion Sensors", Phys. Status Solidi A, 185(1), 79〜83 (2001)(DOI: 10.1002/1521-396X(200105)185:1<79::AID-PSSA79>3.0.CO;2-8

8) H. Umezawa, H. Taniuchi, T. Arima, M. Tachiki, H. Okushi, H. Kawarada "High-performance surface-channel diamond field-effect transistors", Silicon  Carbide and Related Materials, ECSCRM2000 Materials Science Forum , 353-356, 815-818 (2000) (DOI:10.4028/www.scientific.net/MSF.353-356.815

9) H. Umezawa; Y. Ohba; H. Ishizaka; T. Arima; H. Taniuchi; M. Tachiki; H. Kawarada, "Fabrication of 0.1 μm channel diamond metal-insulator-semiconductor field-effect transistor",Materials Research Society Symposium Proceedings. ;680:220-225.(16 April 2001 〜 20 April 2001)

10) H. Umezawa; H. Taniuchi; T. Arima; H. Ishizaka; N. Fujihara; Yoshikazu; Ohba; M. Tachiki; H. Kawarada, "High frequency application of high transconductance surface-channel diamond field-effect transistors",IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD).:195-198.( 4 June 2001〜7 June 2001)

11) M. Tachiki; T. Fukuda; H. Seo; K. Sugata; T. Banno; H. Umezawa; H. Kawarada, "Nanodevice fabrication on hydrogenated diamond surface using atomic force microscope",Materials Research Society Symposium - Proceedings.;675:W12.5.1-W12.5.5.( 17 April 2001〜20 April 2001)

12) 川原田 洋, 立木 実, 梅沢 仁 "表面伝導層を用いたダイヤモンド電子デバイス", 応用物理, 70, 536-541 (2001)