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2018年
- D. L. Creedon, Y. Jiang, K. Ganesan, A. Stacey, T. Kageura, H. Kawarada, J. C. McCallum, B. C. Johnson, S. Prawer, D. N. Jamieson, "Irradiation-Induced Modification of the Superconducting Properties of Heavily-Boron-Doped Diamond" Physical Review Applied, 10 (4), 044016/1-8 (Oct. 2018). (DOI: 10.1103/PhysRevApplied.10.044016)
- T. Yamaguchi, Y. Sasama, H. Takeya, Y. Takano, T. Kageura, H. Kawarada, "Ionic-liquid-gating setup for stable measurements and reduced electronic inhomogeneity at low temperatures", Review of Scientific Instruments, 89 (10), 103903/1-5 (Oct. 2018). (DOI: 10.1063/1.5041936)
- T. Kageura, M. Hideko, I. Tsuyuzaki, S. Amano, A. Morishita, T. Yamaguchi, Y. Takano, H. Kawarada "Superconductivity in nano- and micro-patterned high quality single crystalline boron-doped diamond films", Diamond and Related Materials, 90, 181-187(Nov. 2018), (https://doi.org/10.1016/j.diamond.2018.10.013)
- R. Fukuda, P. Balasubramanian, I. Higashimata, G. Koike, T. Okada, R. Kagami, T. Teraji, S. Onoda, M. Haruyama, K. Yamada, M. Inaba, H. Yamano, F. M. Stürner, S. Schmitt, L. P. McGuinness, F. Jelezko, T. Ohshima, T. Shinada, H.Kawarada, W. Kada & 3 others, "Lithographically engineered shallow nitrogen-vacancy centers in diamond for external nuclear spin sensing", New Journal of Physics, 20(8), 083029/1-9(Aug. 2018)(DOI: 10.1088/1367-2630/aad997)
- S. Falina, S. Kawai, N. Oi, H. Yamano, T. Kageura, E. Suaebah, M. Inaba, Y. Shintani, M. Syamsul, H. Kawarada, "Role of carboxyl and amine termination on a boron-doped diamond solution gate field effect transistor (SGFET) for PH sensing" Sensors 2018, 18(7), 2178/1-10 (July 2018), (DOI:10.3390/s18072178)
- N. Oi, M. Inaba, S. Okubo, I. Tsuyuzaki, T. Kageura, S. Onoda, A. Hiraiwa H.Kawarada "Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors", Scientific Reports. 8, 10660/1-10 (July 2018) (DOI:10.1038/s41598-018-28837-5)
- Hiroshi Kawarada, “High voltage p-channel MOSFETs using two-dimensional hole gas", in Power Electronics Device Applications of Diamond Semiconductors, Eds. Satoshi Koizumi, Hitoshi Umezawa, Julien Pernot, Mariko Suzuki (Woodhead Publishing, June 2018), 347-359. (ISBN: 978-0-08-102183-5)
- M. Inaba, K. Ohara, M. Shibuya, T. Ochiai, D. Yokoyama, W. Norimatsu, M. Kusunoki, H. Kawarada, "Electrical contact properties between carbon nanotube ends and a conductive atomic force microscope tip" J. Appl. Phys. 123, 244502/1-8 (June 2018). (DOI: 10.1063/1.5027849)
- A. Hiraiwa, T. Sasaki, S. Okubo, K. Horikawa, and H. Kawarada, "Time-dependent dielectric breakdown of atomic-layer-deposited Al2O3 films on GaN," J. Appl. Phys. 123, 155303/1-9 (19 April 2018). (DOI:10.1063/1.5022338)
- Mohd Syamsul, N. Oi, S. Okubo, T. Kageura, H. Kawarada, “Heteroepitaxial diamond field-effect transistor for high voltage applications”, IEEE Electron Device Letters, 39, 1, 51-54, (Jan.2018)(DOI: 10.1109/LED.2017.2774290)
- K. Matsuda, W. Norimatsu, J. Bao, H. Kawarada, M. Kusunoki, "In-plane electrical conduction mechanisms of highly dense carbon nanotube forests on silicon carbide," J. Appl. Phys. 123, 145104/1-7 (28 Jan. 2018) (DOI:10.1063/1.5004507)
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