WASEDA UNIVERSITY
              
 
 
 

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2019年

  1. T. Kageura, M. Hideko, I. Tsuyuzaki, A. Morishita, A. Kawano, Y. Sasama, T. Yamaguchi, Y. Takano, M. Tachiki, S. Ooi, K. Hirata, S. Arisawa, H. Kawarada, "Single-crystalline boron-doped diamond superconducting quantum interference devices with regrowth-induced step edge structure", Scientific Reports, in press (2019)
  2. Y. Shintani, S. Ibori, H. Kawarada "Deoxyribonucleic-acid-sensitive Polycrystalline Diamond Solution-gate Field-effect Transistor with Carboxyl-terminated boron-doped Channel", Analytical Sciences, 35, 8, 923-927, (Aug. 2019) (DOI: 10.2116/analsci.18P520).
  3. S. Okubo, K. Horikawa, H. Kawarada, and A. Hiraiwa, "Gate/insulator-interfacial-dipole-controlled current conduction in Al2O3 metal-insulator-semiconductor capacitors," J. Appl. Phys. 126, 045704/1-10 (July 2019) (DOI: 10.1063/1.5089600).
  4. M. Inaba, H. Kawarada Y. Ohno, "Electrical property measurement of two-dimensional hole-gas layer on hydrogen-terminated diamond surface in vacuum-gap-gate structure",  Applied Physics Letters, 114, 253504/1-5, (June 2019).(DOI: 10.1063/1.5099395)
  5. W. Fei, M. Inaba, H. Hoshino, I. Tsuyusaki, S. Kawai, M. Iwataki, H. Kawarada, "Point-arc remote plasma chemical vapor deposition for high-quality single crystal diamond selective growth",  Physica Status Solidi A, 1900227/1-6 (June 2019) (DOI: 10.1002/pssa.201900227).
  6. M. Haruyama, S. Onoda, T. Higuchi, W. Kada, , A. Chiba, Y. Hirano, T. Teraji, R. Igarashi, S. Kawai, H. Kawarada, Y. Ishii, R. Fukuda, T. Tanii, J. Isoya, T. Ohshima, & O. Hanaizumi, "Triple nitrogen-vacancy centre fabrication by C5N4Hn ion implantation", Nature communications, 10, 1, 2664/1-9 (June 2019) (DOI: 10.1038/s41467-019-10529-x)
  7. N. Oi, T. Kudo, M. Inaba, S. Okubo, S. Onoda, A. Hiraiwa, H. Kawarada, "Normally-off Two-Dimensional Hole Gas Diamond MOSFETs Through Nitrogen-ion Implantation", IEEE Electron Device Letters, 40, 6, 933-936, (Jun. 2019) (DOI: 10.1109/LED.2019.2912211)
  8. A. Hiraiwa, S. Okubo, K. Horikawa, H.Kawarada, "Advanced photo-assisted capacitance–voltage characterization of insulator/widebandgap semiconductor interface using super-bandgap illumination", Journal of Applied Physics, 125, 17, 175704/1-10 ( May 2019) (DOI: 10.1063/1.5089793)
  9. Y. Shintani, S. Ibori, H. Kawarada, "Deoxyribonucleic-acid-sensitive Polycrystalline Diamond Solution-gate Field-effect Transistor with Carboxyl-terminated boron-doped Channel", Analytical Sciences, Advance Publication by J-STAGE (April 2019) ( DOI:10.2116/analsci.18P520)
  10. E. Suaebah, M. Hasegawa, J. J. Buendia, W. Fei, M. Chandran, A. Hoffman, H. Kawarada, "Functionalization of a Diamond Surface through N2 and H2 Irradiation for Estrogen (17β-estradiol) Aptamer Sensing ", Sensors and Materials, 31, 4(1), 1119-1134 (Apr. 2019) (DOI: 10.18494/SAM.2019.2231) Open Access
  11. S. Kono, T. Kageura, Y. Hayashi, S.-G. Ri, T. Teraji, D. Takeuchi, M. Ogura, H. Kodama, A. Sawabe, M. Inaba, A. Hiraiwa, H. Kawarada "Carbon 1s X-ray photoelectron spectra of realistic samples of hydrogen-terminated and oxygen-terminated CVD diamond (111) and (001) ", Diamond and Related Materials, 93, 105-130. (March 2019) (https://doi.org/10.1016/j.diamond.2019.01.017)
  12. S. Imanishi, K. Horikawa, N. Oi, S. Okubo, T. Kageura, A. Hiraiwa, H. Kawarada, "3.8 W/mm power density for ALD Al2 O 3 -based two-dimensional hole gas diamond MOSFET operating at saturation velocity", IEEE Electron Device Letters, 40 (2), 279-282, (Feb. 2019) (DOI: 10.1109/LED.2018.2886596)
  13. S. Kawai, H. Yamano, T. Sonoda, K. Kato, J. J. Buendia, T. Kageura,R. Fukuda, T. Okada, T. Tanii, T.Higuchi, M. Haruyama, K. Yamada, S. Onoda, T. Ohshima, W. Kada, O. Hanaizumi, A. Stacey, T. Teraji, S. Kono, J. Isoya, H.Kawarada, "Nitrogen-Terminated Diamond Surface for Nanoscale NMR by Shallow Nitrogen-Vacancy Centers", 2019 Jan., The Journal of Physical Chemistry C, 123 (6), 3594-3604. (Jan. 2019) (DOI: 10.1021/acs.jpcc.8b11274)
  14. S.Falina, M.Syamsul, Y.Iyama, M.Hasegawa, Y.Koga, H.Kawarada, "Carboxyl-functionalized graphene SGFET: pH sensing mechanism and reliability of anodization", Diamond and Related Materials, 91, 15-21, (Jan. 2019)( https://doi.org/10.1016/j.diamond.2018.11.005 )