WASEDA UNIVERSITY
              
 
 
 

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2021年

  1. A. Morishita, S. Amano, I. Tsuyuzaki, T. Kageura, Y. Takahashi, M. Tachiki, S. Ooi, M. Takano, S. Arisawa, Y. Takano, H. Kawarada, "Crystal analysis of grain boundaries in boron-doped diamond superconducting quantum interference devices operating above liquid helium temperature", Carbon Electronics. In Press (May 2021) (DOI: https://doi.org/10.1016/j.carbon.2021.04.097)
  2. T. Tatsuishi, K. Kanehisa, T. Kageura, T. Sonoda, Y. Hata, K. Kawakatsu, T. Tanii, S. Onoda, A. Stacey, S. Kono, H. Kawarada, "Highly Aligned 2D NV Ensemble Fabrication from Nitrogen Terminated (111) Surface.", Carbon Electronics. 180, 127-134 (Aug.15, 2021) (DOI: https://doi.org/10.1016/j.carbon.2021.04.057)
  3. R. Y. Umetsu, S. Semboshi, Y. Mitsui, H. Katsui, Y. Nozaki, I. Yuitoo, T. Takeuchi, M. Saito, H. Kawarada, "Microstructure, Morphology and Magnetic Property of (001)-Textured MnAlGe Films on Si/SiO2 Substrate",Materials Transactions,  [Advance Publication] Released: March 26, 2021, (DOI: https://doi.org/10.2320/matertrans.MT-M2020309)
  4. J. Tsunoda, M. Iwataki, N. Oi, A. Morishita, A. Hiraiwa, H. Kawarada,"(111) Vertical-Type Two-Dimensional Hole Gas Diamond MOSFETs with Hexagonal Trench Structures" , Carbon, 176, 349-357, (May 2021). https://doi.org/10.1016/j.carbon.2021.01.014
  5. T. Bi, Y. Chang, W. Fei, M. Iwataki, A. Morishita, Y. Fu, N, Niikura, H. Kawarada, "C-Si Bonded Two-Dimensional Hole Gas Diamond MOSFET with Normally-off Operation and Wide Temperature Range Stability",  Carbon, 175, 525-533. (April 30, 2021).  https://doi.org/10.1016/j.carbon.2021.01.012
  6. S. Imanishi, K. Kudara, H. Ishiwata, K. Horikawa, S. Amano, M. Iwataki, A. Morishita, A. Hiraiwa, H. Kawarada, "Drain Current Density over 1.1 A/mm in 2D Hole Gas Diamond MOSFETs with Regrown p++-Diamond Ohmic Contacts", IEEE Electron Device Letters, 42, 2,  204-207, (Feb 2021) (DOI: 10.1109/LED.2020.3047522)
  7. 川原田 洋, 設計技術シリーズ「次世代パワー半導体デバイス・実装技術の基礎 ―Siから新材料への新展開―」[監修 田中保宜], 科学情報出版, 第5章ダイヤモンドパワーデバイス, 5-11 「2DHGをチャネル層に適用したダイヤモンドMOSFET」, 237-242, 2021年1月24日, (ISBN978-4-904774-95-3)