WASEDA UNIVERSITY
              
 
 
 

2021
2020
2019
2018
2017
2016
2015
2014
2013
2012
2011
2010
2009
2008
2007
2006
2005
2004
2003
2002
2001
2000
1999
1998
1997
1996
1995
1994
1993
1992
1991
1990
1989
1988
1987
1986
1985
1984
1983

 

2021年

  1. K. Kudara, S. Imanishi, A. Hiraiwa, Y. Komatsuzaki, Y. Yamaguchi, Y. Kawamura, S. Shinjo, H. Kawarada, "High Output Power Density of 2DHG Diamond MOSFETs with Thick ALD-Al2O3", IEEE Transactions on Electron Devices, 68, 8, 3942-3949, (Aug. 2021) (DOI: 10.1109/TED.2021.3086457)
  2. J. Tsunoda, M. Iwataki, K. Horikawa, S. Amano, K. Ota, A. Hiraiwa, and H. Kawarada, "Low On-Resistance (2.5 mΩcm2) Vertical-Type Two-Dimensional Hole Gas Diamond MOSFETs with Trench Gate Structure", IEEE Trans. Electron Devices, 68, 7, 3490-3496, (July 2021) (DOI: 10.1109/TED.2021.3083568)
  3. A. Hiraiwa, K. Horikawa, and H. Kawarada, "Space-charge-controlled field emission analysis of current conduction in amorphous and crystallized atomic-layer-deposited Al2O3 on GaN," Journal of Applied Physics 129, 195303-1/12 (18 May, 2021). (DOI:10.1063/5.0047200)
  4. A. Morishita, S. Amano, I. Tsuyuzaki, T. Kageura, Y. Takahashi, M. Tachiki, S. Ooi, M. Takano, S. Arisawa, Y. Takano, H. Kawarada, "Crystal analysis of grain boundaries in boron-doped diamond superconducting quantum interference devices operating above liquid helium temperature", Carbon. 181, 379-388 (Aug. 30, 2021) (DOI: https://doi.org/10.1016/j.carbon.2021.04.097)
  5. T. Tatsuishi, K. Kanehisa, T. Kageura, T. Sonoda, Y. Hata, K. Kawakatsu, T. Tanii, S. Onoda, A. Stacey, S. Kono, H. Kawarada, "Highly Aligned 2D NV Ensemble Fabrication from Nitrogen Terminated (111) Surface.", Carbon. 180, 127-134 (Aug.15, 2021) (DOI: https://doi.org/10.1016/j.carbon.2021.04.057)
  6. R. Y. Umetsu, S. Semboshi, Y. Mitsui, H. Katsui, Y. Nozaki, I. Yuitoo, T. Takeuchi, M. Saito, H. Kawarada, "Microstructure, Morphology and Magnetic Property of (001)-Textured MnAlGe Films on Si/SiO2 Substrate",Materials Transactions, 62, 5, 680-687 (May 1, 2021) (DOI: https://doi.org/10.2320/matertrans.MT-M2020309)
  7. J. Tsunoda, M. Iwataki, N. Oi, A. Morishita, A. Hiraiwa, H. Kawarada,"(111) Vertical-Type Two-Dimensional Hole Gas Diamond MOSFETs with Hexagonal Trench Structures" , Carbon, 176, 349-357, (May 2021). https://doi.org/10.1016/j.carbon.2021.01.014
  8. T. Bi, Y. Chang, W. Fei, M. Iwataki, A. Morishita, Y. Fu, N, Niikura, H. Kawarada, "C-Si Bonded Two-Dimensional Hole Gas Diamond MOSFET with Normally-off Operation and Wide Temperature Range Stability",  Carbon, 175, 525-533. (April 30, 2021).  https://doi.org/10.1016/j.carbon.2021.01.012
  9. S. Imanishi, K. Kudara, H. Ishiwata, K. Horikawa, S. Amano, M. Iwataki, A. Morishita, A. Hiraiwa, H. Kawarada, "Drain Current Density over 1.1 A/mm in 2D Hole Gas Diamond MOSFETs with Regrown p++-Diamond Ohmic Contacts", IEEE Electron Device Letters, 42, 2,  204-207, (Feb 2021) (DOI: 10.1109/LED.2020.3047522)
  10. 川原田 洋, "Ru(0 0 0 1)基板上のダイヤモンド(1 1 1)粒子のヘテロエピタキシャル成長", ニューダイヤモンド, 142 (37-3), 38-40 (トピックス) (July 2021)
  11. 川原田 洋, 設計技術シリーズ「次世代パワー半導体デバイス・実装技術の基礎 ―Siから新材料への新展開―」[監修 田中保宜], 科学情報出版, 第5章ダイヤモンドパワーデバイス, 5-11 「2DHGをチャネル層に適用したダイヤモンドMOSFET」, 237-242, 2021年1月24日, (ISBN978-4-904774-95-3)