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2023年

1. Y. Fu, T. Bi, Y. Chang, R. Xu, Y. Xu, H. Kawarada, "Oxidized-Silicon-Terminated Diamond p-FETs with SiO2-Filling Shallow Trench Isolation Structures," IEEE Electron Device Letters, 44, 11, 1899-1902 (2023 Nov 1)(DOI: https://ieeexplore.ieee.org/document/10264206)
2. K. Ota, Y. Fu, K. Narita, C. Wakabayashi, A. Hiraiwa, T. Fujishima, H. Kawarada, "Normally-off operation in vertical diamond MOSFETs using an oxidized Si-terminated diamond channel”, Carbon, 213, 118099/1-7, (Sept. 2023)(DOI: https://doi.org/10.1016/j.carbon.2023.118099)
3. A. Chanuntranont, K. Otani, D. Saito, Y. Ueda, M. Tsugawa, S. Usui, Y. Miyake, T. Teraji, S. Onoda, T. Shinada, H. Kawarada, T. Tanii, "Enhancing photon collection from single shallow nitrogen-vacancy centers in diamond nanopillars for quantum heterodyne measurements," Applied Physics Express, 16, 8, 082006/1-5 (2023 Aug 1)(DOI: https://iopscience.iop.org/article/10.35848/1882-0786/acede9/meta)
4. Alaric Yohei Kawai Pétillot*, Shuichi Shoji, Hiroshi Kawarada, Jun Mizuno, "Effects of Surface Contaminants on Bonding Strength for Direct Cu-Cu Bonding with Passivation Layer," 2023 International Conference on Electronics Packaging, ICEP 2023, 31-32, (May 23, 2023)(DOI: 10.23919/ICEP58572.2023.10129767)
5. Muhaimin Haziq, Norshamsuri Ali, Shaili Falina, Hiroshi Kawarada, Mohd Syamsul "Impact of Notch Structures on Transfer Characteristics of AlGaN/GaN HEMTs: A Simulation Study," Key Engineering Materials, 947, 15-20 (2023)(DOI: 10.4028/p-xxb0t7)
6. M. A. Che Seliman, N. A. Ali Yusup, M. A. Ahmad, C. Ibau, Mohd Nuzaihan, H. Kawarada, Z. Hassan, F. Packeer, S. Falina, M. Syamsul, "Nanomanipulation of Functionalized Gold Nanoparticles on GaN," Key Engineering Materials, 947, 9-14 (2023)(DOI: 10.4028/p-jzv559)
7. Najihah Fauzi, Rahil Izzati Mohd Asri, Mohamad Faiz Mohamed Omar, Asrulnizam Abd Manaf*, Hiroshi Kawarada, Shaili Falina*, Mohd Syamsul, "Status and Prospects of Heterojunction-Based HEMT for Next-Generation Biosensors," Micromachines, 14, 2, 325 (Feb. 2023)(DOI: 10.3390/mi14020325)
8. S. Kono, K. Shima, S. F. Chichibu, M. Shimomura,T. Kageura, H. Kawarada, "Band alignment and quality of Al0.6Ga0.4N/AlN films grown on diamond (111) substrate by remote N-plasma assisted MBE", Diamond & Related Materials, 136, 110013 (1-17) (June 2023) (DOI: https://doi.org/10.1016/j.diamond.2023.110013)
9. Z. Zulkifli, N. Ali, S. Falina, H. Kawarada, F. Packeer, M. Syamsul, “Comparison of the Electrical Performance of AlN and HfO2 Passivation Layer in AlGaN/GaN HEMT,” Key Engineering Materials, 947, 21-26 (2023)(DOI: https://doi.org/10.4028/p-445y05)
10. Y. Ueda, Y. Miyake, A. Chanuntranont, K. Otani, M. Tsugawa, D. Saito, S. Usui, T. Teraji, S. Onoda, T. Shinada, H. Kawarada, T. Tanii, “Detecting nuclear spins in an organosilane monolayer using nitrogen-vacancy centers for analysis of precursor self-assembly on diamond surface,” Japanese journal of applied physics, 62, SG1049, (June 2023) (DOI: 10.35848/1347-4065/accc91)
11. M. Hasnan A. Hamid, R. Izzati M. Asri, M. Nuzaihan, M. Inaba, Z. Hassan, H. Kawarada, S. Falina, M. Syamsul, "Electrical Properties of GaN Cap Layer for AlGaN/GaN HEMT," Key Engineering Materials, 947, 3-8, (May 2023) (DOI: https://doi.org/10.4028/p-9qdk55)
12. Y. H. Chang, Y. Iyama, S. Kawaguchi, T. Takarada, H. Sato, R. Nomoto, K. Tadenuma, S. Falina, M. Syamsul, Y. Shintani, J. Suehiro, H. Kawarada, "Ion Sensitive Stainless Steel Vessel for All-solid-state pH Sensing System Incorporating pH Insensitive Diamond Solution Gate Field-effect Transistors", IEEE Sensors Journal, 23, 9, 9110-9119 (Mar.20, 2023) (DOI: 10.1109/JSEN.2023.3257348)
13. H. Kawarada, "Diamond p-FETs using two-dimensional hole gas for high frequency and high voltage complementary circuits," Journal of Physics D: Applied Physics, 56 (2023), 5, 053001/1-27(Feb. 2, 2023) (DOI: 10.1088/1361-6463/aca61c)
14. X. Zhu, S. Shao, S. Chan, J. Tu, K. Ota, Y. Huang, K. An, L. Chen, J. Wei, J. Liu, C. Li, H. Kawarada, "High Performance of Normally-On and Normally-Off Devices with Highly Boron-Doped Source and Drain  on H-Terminated Polycrystalline Diamond," Advanced Electronic Materials, 2023, 9,2201122-1/8, (Jan. 25, 2023)  (DOI: 10.1002/aelm.202201122)
15. Y. Yusuf, M. Esmed A. Samsudin, M. I. M. Taib, M. A. Ahmad, M. Fauzi P. Mohamed, H. Kawarada, S. Falina, N. Zainal, M. Syamsul, "Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT," Crystals 2023, 13(1), 90, (Jan. 25, 2023) (DOI: 10.3390/cryst13010090)