|
 2023
2022
2021
2020
2019
2018
2017
2016
2015
2014
2013
2012
2011
2010
2009
2008
2007
2006
2005
2004
2003
2002
2001
2000
1999
1998
1997
1996
1995
1994
1993
1992
1991
1990
1989
1988
1987
1986
1985
1984
1983
|
|
2023年
- Alaric Yohei Kawai Pétillot*, Shuichi Shoji, Hiroshi Kawarada, Jun Mizuno, "Effects of Surface Contaminants on Bonding Strength for Direct Cu-Cu Bonding with Passivation Layer," 2023 International Conference on Electronics Packaging, ICEP 2023, 31-32, (May 23, 2023)(DOI: 10.23919/ICEP58572.2023.10129767)
- Muhaimin Haziq, Norshamsuri Ali, Shaili Falina, Hiroshi Kawarada, Mohd Syamsul "Impact of Notch Structures on Transfer Characteristics of AlGaN/GaN HEMTs: A Simulation Study," Key Engineering Materials, 947, 15-20 (2023)(DOI: 10.4028/p-xxb0t7)
- M. A. Che Seliman, N. A. Ali Yusup, M. A. Ahmad, C. Ibau, Mohd Nuzaihan, H. Kawarada, Z. Hassan, F. Packeer, S. Falina, M. Syamsul, "Nanomanipulation of Functionalized Gold Nanoparticles on GaN," Key Engineering Materials, 947, 9-14 (2023)(DOI: 10.4028/p-jzv559)
- Najihah Fauzi, Rahil Izzati Mohd Asri, Mohamad Faiz Mohamed Omar, Asrulnizam Abd Manaf*, Hiroshi Kawarada, Shaili Falina*, Mohd Syamsul, "Status and Prospects of Heterojunction-Based HEMT for Next-Generation Biosensors," Micromachines, 14, 2, 325 (Feb. 2023)(DOI: 10.3390/mi14020325)
- S. Kono, K. Shima, S. F. Chichibu, M. Shimomura,T. Kageura, H. Kawarada, "Band alignment and quality of Al0.6Ga0.4N/AlN films grown on diamond (111) substrate by remote N-plasma assisted MBE", Diamond & Related Materials, 136, 110013 (1-17) (June 2023) (DOI: https://doi.org/10.1016/j.diamond.2023.110013)
- Z. Zulkifli, N. Ali, S. Falina, H. Kawarada, F. Packeer, M. Syamsul, “Comparison of the Electrical Performance of AlN and HfO2 Passivation Layer in AlGaN/GaN HEMT,” Key Engineering Materials, 947, 21-26 (2023)(DOI: https://doi.org/10.4028/p-445y05)
- Y. Ueda, Y. Miyake, A. Chanuntranont, K. Otani, M. Tsugawa, D. Saito, S. Usui, T. Teraji, S. Onoda, T. Shinada, H. Kawarada, T. Tanii, “Detecting nuclear spins in an organosilane monolayer using nitrogen-vacancy centers for analysis of precursor self-assembly on diamond surface,” Japanese journal of applied physics, 62, SG1049, (June 2023) (DOI: 10.35848/1347-4065/accc91)
- M. Hasnan A. Hamid, R. Izzati M. Asri, M. Nuzaihan, M. Inaba, Z. Hassan, H. Kawarada, S. Falina, M. Syamsul, "Electrical Properties of GaN Cap Layer for AlGaN/GaN HEMT," Key Engineering Materials, 947, 3-8, (May 2023) (DOI: https://doi.org/10.4028/p-9qdk55)
- Y. H. Chang, Y. Iyama, S. Kawaguchi, T. Takarada, H. Sato, R. Nomoto, K. Tadenuma, S. Falina, M. Syamsul, Y. Shintani, J. Suehiro, H. Kawarada, "Ion Sensitive Stainless Steel Vessel for All-solid-state pH Sensing System Incorporating pH Insensitive Diamond Solution Gate Field-effect Transistors", IEEE Sensors Journal, 23, 9, 9110-9119 (Mar.20, 2023) (DOI: 10.1109/JSEN.2023.3257348)
- H. Kawarada, "Diamond p-FETs using two-dimensional hole gas for high frequency and high voltage complementary circuits," Journal of Physics D: Applied Physics, 56 (2023), 5, 053001/1-27(Feb. 2, 2023) (DOI: 10.1088/1361-6463/aca61c)
- X. Zhu, S. Shao, S. Chan, J. Tu, K. Ota, Y. Huang, K. An, L. Chen, J. Wei, J. Liu, C. Li, H. Kawarada, "High Performance of Normally-On and Normally-Off Devices with Highly Boron-Doped Source and Drain on H-Terminated Polycrystalline Diamond," Advanced Electronic Materials, 2023, 9,2201122-1/8, (Jan. 25, 2023) (DOI: 10.1002/aelm.202201122)
- Y. Yusuf, M. Esmed A. Samsudin, M. I. M. Taib, M. A. Ahmad, M. Fauzi P. Mohamed, H. Kawarada, S. Falina, N. Zainal, M. Syamsul, "Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT," Crystals 2023, 13(1), 90, (Jan. 25, 2023) (DOI: 10.3390/cryst13010090)
|
|
