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2024
国際学会
- H. Kawarada, "H-Terminated Transistors with Different Surface Terminations," 2024 MRS Fall Meeting & Exhibit, Boston, USA, Dec.1-6, 2024(Tutorial, Dec.1, 2024)
- M.Takeuchi, C.Wakabayashi, M.Tachiki, S.Ooi, K.Amazutsumi, R.Matsumoto, Y.Takano, H.Kawarada, "Diamond superconducting FETs and high current vertical FETs using heavily boron doping", 2024 MRS Fall Meeting & Exhibit, Boston, USA, Dec.1-6, 2024(Oral, Dec.4 2024)
- R. Yamamoto, N. Oi, K.Ota, K. Narita, A. Hiraiwa, T. Fujishima, H. Kawarada, "Reduction of the Electric Field Strength by the Thick Undoped Layer in the (001) C-H Vertical Diamond MOSFETs," 2024 MRS Fall Meeting & Exhibit, Boston, USA, Dec.1-6, 2024 (Oral, Dec.4, 2024)
- Y.Takano, A.Takahashi, K.Ota, Y.Chou, F.Asai, A.Hiraiwa, T.Fujishima, H.Kawarada, "Fabrication of 2DHG Multi-finger Diamond vertical MOSFETs and I-V and RF characteristics" 2024 MRS Fall Meeting & Exhibit, Boston, USA, Dec.1-.6, 2024 (Poster, Dec.3, 2024)
- H. Kawarada, K. Ota, K. Kudara, N. Oi, T. Fujishima "Diamond RF Planar and Power Vertical p-FET Using 2D Hole Gas," The 11th Asia-Pacific Workshop on Widegap Semiconductors (APWS2024), Busan, Korea, Oct. 13-17, 2024 (Oct. 16, 2024, Keynote Speech)
- X.Jia, K.Narita, K.Ota, A.Takahashi, R.Yamamoto, A.Hiraiwa, T.Fujishima, H.Kawarada, “Reliable Formation of Diamond p-type Channel by Additional Negative Ions Formed from Corona Discharge” The 4th International Symposium on Design & Engineering by Joint Inverse Innovation for Materials Architecture (DEJl²MA 2024), Kokukaikan Business Forum, Tokyo, Japan, Oct. 3., 2024 (Poster)
- K. Narita, R. Yamamoto, K. Ota, A. Hiraiwa, H. Kawarada, " Improvement of On-resistance in C-Si-O channel (001) diamond MOSFET with Heavily Boron Doped Layer ", The 4th International Symposium on Design & Engineering by Joint Inverse Innovation for Materials Architecture (DEJl2MA2024), Kokukaikan Business Forum, Tokyo, Japan, Oct. 3 , 2024 (Poster).
- Y. Chou, F. Asai, A. Hiraiwa, Y. Nishibayashi, and Hiroshi Kawarada, "IDSmax = 600 mA/mm and fmax = 12.3 GHz achieved by MOSFET on (111) Highly Oriented Polycrystalline 1-inch Diamond Substrate," The 4th International Symposium on Design & Engineering by Joint Inverse Innovation for Materials Architecture(DEJl²MA 2024), Kokukaikan Business Forum, Tokyo, Japan, Oct. 3, 2024 (Poster)
- K. Masadome, H. Sato, R. Nomoto, H. Kawarada, “Amplification of underwater wireless communication signals using transformers and resonance”, 4th International Symposium on Design & Engineering by Joint Inverse Innovation for Materials Architecture(DEJl²MA 2024), Kokukaikan Business Forum, Tokyo, Japan, Oct. 3, 2024 (Poster)
- H. Kawarada, K. Kudara , M. Arai , A. Takahashi , K. Ota , T. Fujishima "High Power and High Frequency Diamond Field Effect Transistors," 2024 International Conference on Solid State Devices and Materials, Himeji, Japan, Sept. 1-4, 2024 (Invited, Sept. 2, 2024)
- R. Yamamoto, K. Narita, K. Ota, N. Oi, A. Hiraiwa, T. Fujishima, H. Kawarada, "Improvement of the Contact Resistance and Subthreshold Swing of the (001) C-H Diamond MOSFETs with Heavily Boron Doped Layer," 2024 International Conference on Solid State Devices and Materials, Himeji, Japan, Sept. 1-4, 2024 (Oral, Sept. 2, 2024)
- H. Kawarada, "Protein Sensing Using Immobilized DNA/RNA on Diamond FETs", The 1st international seminar on Physics and it's application(ISoPA 2024), 10 August 2024, Universitas Negeri Surabaya, Indonesia (Online, Keynote Speech)
- H. Kawarada, "Diamond Field Effect Transistors for Power and High Frequency Application," Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University (國立成功大學), Tainan City, Taiwan, Mar. 1, 2024 (Invited)
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