WASEDA UNIVERSITY
@@@@@@@@@@@@
 
 
 

2024
2023
2022
2021
2020
2019
2018
2017
2016
2015
2014
2013
2012
2011
2010
2009
2008
2007
2006
2005
2004
2003
2002
2001
2000
1999
1998
1997
1996
1995
1994
1993
1992
1991
1990
1989
1988
1987
1986
1985
1984
1983

 

2001

1) K. Nakazawa, K. Tanabe, M. Tachiki, H. Kawarada, S. Koizumi, "Excitonic Recombination Radiation in Hosphorus-doped CVD Diamonds", Phys. Rev. B, 64i23j, 235203-1`235203-6 (15 December 2001)

2) H. Umezawa, H. Taniuchi, T. Arima, M. Tachiki, H. Kawarada, "Potential Applications of Surface Channel Diamond Field-Effect Transistors", Diam. Relat. Mater., 10i9-10j, 1743`1748 (September 2001)iDOI: 10.1016/S0925-9635(01)00406-Xj

3) K. Tanabe, K. Nakazawa, J. Susantyo, H. Kawarada, S. Koizumi "Cathodoluminescence of Phosphorus doped (111) Homoepitaxial Diamond Thin Films", Diam. Relat. Mater., 10i9-10j, 1652`1654 (September 2001)iDOI: 10.1016/S0925-9635(01)00389-2j

4) H. Taniuchi, H. Umezawa, T. Arima, M. Tachiki, H. Kawarada, "High-Frequency Performance of Diamond Field-Effect Transistors", IEEE Electr. Device L., 22i8j, 390`392 (August 2001)iDOI: 10.1109/55.936353j

5) N. Taniyama, M. Kudo, O. Matsumoto, H. Kawarada, "Diamond deposition on a large-area substrate by plasma-assisted chemical vapor deposition using an antenna-type coaxial microwave plasma generator", Jpn. J. Appl. Phys., Part2, 40, 7A, L698`L700 (1 July 2001)

6) K. Tsugawa, H. Umezawa, H. Kawarada, "Characterization of Diamond Surface-Channel Metal-Semiconductor Field-Effect Transistor with Device Simulation", Jpn. J. Appl. Phys., 40, 3101-3107 (2001)

7) H. Kawarada, Y. Araki, T. Sakai, T. Ogawa, H. Umezawa, "Electrolyte-Solution-Gate FETs Using Diamond Surface for Biocompatible Ion Sensors", Phys. Status Solidi A, 185i1j, 79`83 (2001)iDOI: 10.1002/1521-396X(200105)185:1<79::AID-PSSA79>3.0.CO;2-8j

8) H. Umezawa, H. Taniuchi, T. Arima, M. Tachiki, H. Okushi, H. Kawarada "High-performance surface-channel diamond field-effect transistors", Silicon  Carbide and Related Materials, ECSCRM2000 Materials Science Forum , 353-356, 815-818 (2000) iDOI:10.4028/www.scientific.net/MSF.353-356.815j

9) H. Umezawa; Y. Ohba; H. Ishizaka; T. Arima; H. Taniuchi; M. Tachiki; H. Kawarada, "Fabrication of 0.1 μm channel diamond metal-insulator-semiconductor field-effect transistor",Materials Research Society Symposium Proceedings. ;680:220-225.i16 April 2001 ` 20 April 2001j

10) H. Umezawa; H. Taniuchi; T. Arima; H. Ishizaka; N. Fujihara; Yoshikazu; Ohba; M. Tachiki; H. Kawarada, "High frequency application of high transconductance surface-channel diamond field-effect transistors",IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD).:195-198.( 4 June 2001`7 June 2001)

11) M. Tachiki; T. Fukuda; H. Seo; K. Sugata; T. Banno; H. Umezawa; H. Kawarada, "Nanodevice fabrication on hydrogenated diamond surface using atomic force microscope",Materials Research Society Symposium - Proceedings.;675:W12.5.1-W12.5.5.( 17 April 2001`20 April 2001)

12) 쌴“c —m, —§–Ø ŽÀ, ”~‘ò m "•\–Ê“`“±‘w‚ð—p‚¢‚½ƒ_ƒCƒ„ƒ‚ƒ“ƒh“dŽqƒfƒoƒCƒX", ‰ž—p•¨—, 70, 536-541 (2001)