WASEDA UNIVERSITY |
2024 |
1998 2) H. Kawarada, C. Wild, N. Herres, P. Koidll, Y. Mizuochi, A. Hokazono H .Nagasawa "Surface morphology and surface p-channel field effect transistor on the heteroepitaxial diamond deposited on inclined beta-SiC (001) surfaces", Appl. Phys. Lett., 72(15), 1878-1880 (1998) (DOI: 10.1063/1.121213) 3) K. Tsugawa, A. Hokazono, H. Noda, K. Kitatani, K. Morita, H. Kawarada "MESFETs and MOSFETs on hydrogen-terminated diamond surfaces", Materials Science Forum, 264-268, 977-980 (Feb.1998) (DOI:10.4028/www.scientific.net/MSF.264-268.977) 4) K. Tsugawa, K. Kitatani, H. Kawarada "Metal-semiconductor field-effect transistors on hydrogen-terminated diamond surfaces", New Diamond and Frontier Carbon Technology, 8(4):289-297. (1998) 5) 川原田洋 "ダイヤモンド電界効果トランジスタの現状と将来", 応用物理, 67, 128 (1998) (解説)
|
|||