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2021
- R. Alhasani, T. Yabe, Y. Iyama, A. Mohammed, N. N. Quang, H. Kawarada, "Effect of Surface Charge Model in the Characterization of Two-Dimensional Hydrogenated Nanocrystalline-Diamond Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with Device Simulation", 2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC), (Jan. 21, 2022) (DOI: 10.1109/NMDC50713.2021.9677505)
- A. Hiraiwa, K. Horikawa, H. Kawarada, M. Kado, and K. Danno, "Postdeposition annealing effect on atomic-layer-deposited Al2O3 gate insulator on (001) β-Ga2O3," Journal of Vacuum Science & Technology B 39, 062205-1/13 (Dec 2021, Published Online: Oct 15, 2021). (DOI:10.1116/6.0001360), Selected as "Editor’s Pick".
- K. Kudara, S. Imanishi, A. Hiraiwa, Y. Komatsuzaki, Y. Yamaguchi, Y. Kawamura, S. Shinjo, H. Kawarada, "High Output Power Density of 2DHG Diamond MOSFETs with Thick ALD-Al2O3", IEEE Transactions on Electron Devices, 68, 8, 3942-3949, (Aug. 2021) (DOI: 10.1109/TED.2021.3086457)
- J. Tsunoda, M. Iwataki, K. Horikawa, S. Amano, K. Ota, A. Hiraiwa, and H. Kawarada, "Low On-Resistance (2.5 mΩcm2) Vertical-Type Two-Dimensional Hole Gas Diamond MOSFETs with Trench Gate Structure", IEEE Trans. Electron Devices, 68, 7, 3490-3496, (July 2021) (DOI: 10.1109/TED.2021.3083568)
- A. Hiraiwa, K. Horikawa, and H. Kawarada, "Space-charge-controlled field emission analysis of current conduction in amorphous and crystallized atomic-layer-deposited Al2O3 on GaN," Journal of Applied Physics 129, 195303-1/12 (18 May, 2021). (DOI:10.1063/5.0047200)
- A. Morishita, S. Amano, I. Tsuyuzaki, T. Kageura, Y. Takahashi, M. Tachiki, S. Ooi, M. Takano, S. Arisawa, Y. Takano, H. Kawarada, "Crystal analysis of grain boundaries in boron-doped diamond superconducting quantum interference devices operating above liquid helium temperature", Carbon. 181, 379-388 (Aug. 30, 2021) (DOI: https://doi.org/10.1016/j.carbon.2021.04.097)
- T. Tatsuishi, K. Kanehisa, T. Kageura, T. Sonoda, Y. Hata, K. Kawakatsu, T. Tanii, S. Onoda, A. Stacey, S. Kono, H. Kawarada, "Highly Aligned 2D NV Ensemble Fabrication from Nitrogen Terminated (111) Surface.", Carbon. 180, 127-134 (Aug.15, 2021) (DOI: https://doi.org/10.1016/j.carbon.2021.04.057)
- R. Y. Umetsu, S. Semboshi, Y. Mitsui, H. Katsui, Y. Nozaki, I. Yuitoo, T. Takeuchi, M. Saito, H. Kawarada, "Microstructure, Morphology and Magnetic Property of (001)-Textured MnAlGe Films on Si/SiO2 Substrate",Materials Transactions, 62, 5, 680-687 (May 1, 2021) (DOI: https://doi.org/10.2320/matertrans.MT-M2020309)
- J. Tsunoda, M. Iwataki, N. Oi, A. Morishita, A. Hiraiwa, H. Kawarada,"(111) Vertical-Type Two-Dimensional Hole Gas Diamond MOSFETs with Hexagonal Trench Structures" , Carbon, 176, 349-357, (May 2021). https://doi.org/10.1016/j.carbon.2021.01.014
- T. Bi, Y. Chang, W. Fei, M. Iwataki, A. Morishita, Y. Fu, N, Niikura, H. Kawarada, "C-Si Bonded Two-Dimensional Hole Gas Diamond MOSFET with Normally-off Operation and Wide Temperature Range Stability", Carbon, 175, 525-533. (April 30, 2021). https://doi.org/10.1016/j.carbon.2021.01.012
- S. Imanishi, K. Kudara, H. Ishiwata, K. Horikawa, S. Amano, M. Iwataki, A. Morishita, A. Hiraiwa, H. Kawarada, "Drain Current Density over 1.1 A/mm in 2D Hole Gas Diamond MOSFETs with Regrown p++-Diamond Ohmic Contacts", IEEE Electron Device Letters, 42, 2, 204-207, (Feb 2021) (DOI: 10.1109/LED.2020.3047522)
- 川原田 洋, "Ru（0 0 0 1）基板上のダイヤモンド（1 1 1）粒子のヘテロエピタキシャル成長", ニューダイヤモンド, 142 (37-3), 38-40 (トピックス) (July 2021)
- 川原田 洋, 設計技術シリーズ「次世代パワー半導体デバイス・実装技術の基礎 ―Siから新材料への新展開―」[監修 田中保宜], 科学情報出版, 第５章ダイヤモンドパワーデバイス, 5-11 「2DHGをチャネル層に適用したダイヤモンドMOSFET」, 237-242, 2021年1月24日, (ISBN978-4-904774-95-3)
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