WASEDA UNIVERSITY
              
 
 
 

2024
2023
2022
2021
2020
2019
2019
2018
2017
2016
2015
2014
2013
2012
2011
2010
2009
2008
2007
2006
2005
2004
2003
2002
2001
2000
1999
1998
1997
1996
1995
1994
1993
1992
1991
1990
1989
1988
1987
1986
1985
1984
1983

 

1995年

  1. M. Katoh; H. Kawarada, "Heteroepitaxial growth of tungsten carbide films on W(110) by plasma-enhanced chemical vapor deposition", Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 34(7 A), 3628-3630, (1995 Jul)
  2. Tsuyoshi Suesada; Naofumi Nakamura; Hiroyuki Nagasawa; Hiroshi Kawarada, "Initial growth of heteroepitaxial diamond on Si(001) substrates via β-SiC buffer layer", Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 1995;34(9 A), 4898-4904 (1995 Sep)
  3. M. Itoh; H. Kawarada, "Fabrication and characterization of metal-semiconductor field-effect transistor utilizing diamond surface-conductive layer", Japanese Journal of Applied Physics,  1995;34(9 A):4677-4681 (1995 Sep)
  4. S. C. Lawson; H. Kanda; H. Kiyota; T. Tsutsumi; H. Kawarada, "Cathodoluminescence from high-pressure synthetic and chemical-vapor- deposited diamond", Journal of Applied Physics. 1995;77(4):1729-1734 (DOI: 10.1063/1.358865)
  5. H. Kawarada, H. Sasaki, A. Satoh "Scanning-tunneling-microscope observation of the homoepitaxial diamond(001) 2×1 reconstruction observed under atmospheric pressure", Phys. Rev. B, 52(15), 11351-11358 (1995) (DOI: 10.1103/PhysRevB.52.11351)
  6. H. Kawarada; T. Suesada; H. Nagasawa, "Heteroepitaxial growth of smooth and continuous diamond thin films on silicon substrates via high quality silicon carbide buffer layers", Applied Physics Letters. 66(5):583-585, 30 January 1995 (DOI:org/10.1063/1.114020)