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2024年

1. A. Hiraiwa, K. Horikawa, H. Kawarada, M. Kado, and K. Danno, "Influence of Al₂O₃ atomic-layer deposition temperature on positive-bias instability of metal/Al₂O₃/β-Ga₂O₃ capacitors," Journal of Vacuum Science & Technology B 42, 012207-1/11 (Jan 2024, Published Online: Jan. 25, 2024). (DOI: 10.1116/6.0003186), selected as "Editor's Pick".
2. S. Okubo, D. Matsumura, H. Kawarada, and A. Hiraiwa, "Influence of gate material and diamond surface termination on current conduction in metal/Al₂O₃/diamond capacitors," Journal of Vacuum Science & Technology B 42, 1, 012202-1/11 (Published Online: Jan. 8, 2024). (DOI: 10.1116/6.0003272)
3. N. Islam, M. F. P. Mohamed, F. A. J. Khan, N. A. Ghazali, H. Kawarada, M. Syamsul, A. F. A. Rahim, A. A. Manaf, "Enhance the AlGaN/GaN HEMTs Device Breakdown Voltage by Implementing Field Plate: Simulation Study," Springer Science and Business Media Deutschland GmbH, p. 133-139, (First Online: Mar. 31 2024) (DOI:https://doi.org/10.1007/978-981-99-9005-4_17)
4. N.Islam, M. F. P. Mohamed, S. F. A. Rahman, M. Syamsul, H. Kawarada, A.F. A. Rahim,"Enhanced Breakdown Voltage of AlGaN/GaN MISHEMT using GaN Buffer with Carbon-Doping on Silicon for Power Device," International Journal of Nanoelectronics and Materials, 17, 2, 204-210, (2024 Apr) (DOI: https://doi.org/10.58915/ijneam.v17i2.684)
5. N. Oi, S. Okubo, I. Tsuyuzaki, A. Hiraiwa, H. Kawarada, "Over 1 A Operation of Vertical-Type Diamond MOSFETs," IEEE Electron Device Letters, 45，9, 1554 – 1557 (Aug. 7, 2024) (DOI:10.1109/LED.2024.3427423)