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2002N 1) M. Tachiki, H. Seo, T. Banno, Y. Sumikawa, H. Umezawa, H. Kawarada "Fabrication of Single-Hole Transistors on Hydrogenated Diamond Surface using Atomic Force Microscope", Appl. Phys. Lett., 81i15j, 2854`2856 (7 October 2002)iDOI: 10.1063/1.1513656j 2) H. Seo, M. Tachiki, T. Banno, Y. Sumikawa, H. Umezawa, H. Kawarada "Investigation of Current-Voltage Characteristics of Oxide Region induced by Atomic Force Microscope on Hydrogen-Terminated Diamond Surface", Jpn. J. Appl. Phys., 41i7Bj, 4980`4982 (July 2002) 3) K. Sugata, M. Tachiki, T. Fukuda, H. Seo, H. Kawarada "Nanoscale Modification of the Hydrogen-Terminated Diamond Surface using Atomic Force Microscope", Jpn. J. Appl. Phys., 41i7Bj, 4983`4986 (July 2002) 4) T. Sakai, Y. Araki, H. Kanazawa, H. Umezawa, M. Tachiki, H. Kawarada "Effect of Cl- Ionic Solutions on Electrolyte-Solution-Gate Diamond Field-Effect Transistors", Jpn. J. Appl. Phys., 41i4 Bj, 2595`2597 (April 2002)iDOI: 10.1143/JJAP.41.2595j 5) H. Umezawa, T. Arima, N. Fujihara, H. Taniuchi, H. Ishizaka, M. Tachiki, C. Wild, P. Koidl, H. Kawarada "RF Performance of high transconductance and high-channel-mobility surface-chanel polycrystalline diamond metal-insulatpr-semiconductor field-effect transistors", Jpn. J. Appl. Phys., 41i4 Bj, 2611`2614 (April 2002)iDOI: 10.1143/JJAP.41.2611j 6) H. Taniuchi, H. Umezawa, H. Ishizaka, H. Kawarada "Microwave performance of diamond field-effect transistors", Jpn. J. Appl. Phys., 41i4 Bj, 2591`2594 (April 2002)iDOI: 10.1143/JJAP.41.2591j 7)Kazuya Yonemoto; Hirofumi Sumi; Yoshikazu Ohba; Hiroshi Kawarada@"A numerical analysis of a CMOS image sensor with a simple fixed-pattern-noise-reduction technology"Kyokai Joho Imeji Zasshi/Journal of the Institute of Image Information and Television Engineers. ,56(4),670`678@iApril 2002j 8) M. Tachiki, T. Fujisaki, N. Taniyama, M. Kudo, H. Kawarada "Heteroepitaxial Diamond Thin Film Growth on Ir(001)/MgO(001) Substrate by Antenna-Edge Plasma Assisted Chemical Vapor Deposition", J. Cryst. Growth, 237-239i1-4 IIj, 1277`1280 (April 2002)iDOI: 10.1016/S0022-0248(01)02067-Xj 9) H. Umezawa, H. Taniuchi, H. Ishizaka, T. Arima, N. Fujihara, M. Tachiki, H. Kawarada "RF Performance of Diamond MISFETs", IEEE Electr. Device L., 23i3j, 121`123 (March 2002)iDOI: 10.1109/55.988811j 10) T. Banno, M. Tachiki, H. Seo, H. Umezawa, H. Kawarada "Fabrication of Diamond Single Hole Transistor using AFM Anodization Process", Diam. Relat. Mater., 11i36j, 387`391 (March 2002)iDOI: 10.1016/S0925-9635(01)00655-0j 11) H. Ishizaka, H. Umezawa, H. Taniuchi, T. Arima, N. Fujihara, M. Tachiki, H. Kawarada "DC and RF Characteristics of 0.7-μm-Gate-Length Diamond Metal-Insulator-semiconductor Field-Effect Transistor", Diam. Relat. Mater., 11i3-6j, 378`381 (March 2002)iDOI: 10.1016/S0925-9635(01)00649-5j 12) T. Fujisaki, M. Tachiki, N. Taniyama, M. Kudo, H. Kawarada "Fabrication of Heteroeptaxial Diamond Thin Films on Ir(001)/MgO(001) Substrates using Antenna-Edge-Type Microwave Plasma-Assisted Chemical Vapor Deposition", Diam. Relat. Mater., 11i3-6j, 478`481 (March 2002)iDOI: 10.1016/S0925-9635(01)00654-9j 13) M. Tachiki; T. Fujisaki; N. Taniyama; M. Kudo; H. Kawarada, "Heteroepitaxial diamond thin film growth on Ir(001)/MgO(001) substrate by antenna-edge plasma assisted chemical vapor deposition (St. Elmo CVD) "New Diamond and Frontier Carbon Technology, 12(6):333`341( 2002) 14) H. Kawarada, "Special issue on diamond epitaxy: Preface ",New Diamond and Frontier Carbon Technology, 12(6):i.,(2002) 15) M. Tachiki; H. Ishizaka; T. Banno; T. Sakai; K.-S. Song; H. Umezawa; H.Kawarada,"Low-temperature operation of diamond surface-channel field-effect transistors",Materials Research Society Symposium - Proceedings. ;719, 139`143.( 1 April 2002 ` 5 April 2002) 16) H. Umezawa, H. Taniuchi, T. Arima, H. Ishizaka, N. Fujihara, Y. Ohba, M. Tachiki, H. Kawarada "High Performance Diamond Field-Effect Transistors on Hydrogen-Terminated Surface-Channel", IEEJ., C-122, 10`16 (2002) 17) ~๒ mCJเ ฐผCLn ๑็Cฮโ พCกด ผ๗Cๅ๋ _maCงุ ภC์ดc m " fI[_Ch\ส`ฑw๐pตฝซ\dE๘สgWX^", dCw๏_ถC(dCE๎๑EVXeๅ), 122-C, 10`16 (2002) (ตา_ถ)
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