WASEDA UNIVERSITY
              
 
 
 

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2022年

  1. Y. Shintani, H. Kawarada, "Fluorine-Terminated Polycrystalline Diamond Solution-Gate Field-Effect Transistor Sensor with Smaller Amount of Unexpectedly Generated Fluorocarbon Film Fabricated by Fluorine Gas Treatment", Materials, 15, 9, 2966 (Apr. 2022), (DOI:https://doi.org/10.3390/ma15092966)
  2. B. Liu, T. Bi, Y. Fu, K. Kudara, S. Imanishi, K. Liu, , B. Dai, , J. Zhu,  H. Kawarada, "MOSFETs on (110) C-H Diamond: ALD Al2O3/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization", IEEE Transactions on Electron Devices. 69, 3, 949-955 7, (Mar 1, 2022), (DOI: 10.1109/TED.2022.3147152
  3. K. Kudara, M. Arai, Y.Suzuki, A.Morishita, J. Tsunoda, A. Hiraiwa, H. Kawarada, " Over 1 A/mm drain current density and 3.6 W/mm output power density in 2DHG diamond MOSFETs with highly doped regrown source/drain", Carbon. 188, 220-228, (March 2022), https://doi.org/10.1016/j.carbon.2021.11.034
  4. S. Kawaguchi, R. Nomoto, H. Sato, T. Takarada, Y. H. Chang , H. Kawarada, "pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-terminated Diamond Solution Gate Field Effect Transistors" Sensors, 22, 1807 (Feb. 2022), (DOI: https://www.mdpi.com/1424-8220/22/5/1807)
  5. J. Tsunoda, N. Niikura, K. Ota, A. Morishita, A. Hiraiwa, and H. Kawarada, " 580 V Breakdown Voltage in Vertical Diamond Trench MOSFETs with a P- -drift Layer" IEEE Electron Device Letters, 43, 1, 88-91 (Jan. 2022), (DOI: 10.1109/LED.2021.3131038)