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2022年

1. K. Mohd Arshad, M. Mat Noor, A. Abd Manaf, H. Kawarada, S. Falina, M. Syamsul, "Packaging design and thermal analysis for 1 mm2 high power VCSEL," Microelectronics International, Accepted/In press – 2022
2. X. Zhu, S. Chan, X. Yuan, J. Tu, S. Shao, Y. Jia, L. Chen, J. Wei, J. Liu, H. Kawarada, C. Li, "Structural transformation of C+ implanted diamond and lift-off process," Diamond and Related Materials, 130, 109525 (1 Dec. 2022) (https://doi.org/10.1016/j.diamond.2022.109525)
3. S. Falina, K. Anuar, S. Arifin S., Joon C. Juan, A. Abd Manaf, H. Kawarada, M. Syamsul, "Two-Dimensional Non-Carbon Materials-Based Electrochemical Printed Sensors: An Updated Review," Sensors, 22,　23, 9358 (1 Dec. 2022) (https://doi.org/10.3390/s22239358)
4. M. Haziq, S. Falina, A. Abd Manaf, H. Kawarada, M.Syamsul, "Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review," Micromachines, 13, 12, 2133(1 Dec. 2022)(DOI: 10.3390/mi13122133)
5. N. Islam, M. Fauzi P. Mohamed, M. Firdaus A. J. Khan, S. Falina, H. Kawarada, M. Syamsul, "Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review," Crystals, 12, 11, 1581(7 Nov. 2022)(DOI: 10.3390/cryst12111581)
6. K. M. Arshad, M. M. Noor, A. Abd Manaf, H. Kawarada, S. Falina, M. Syamsul,  "A Comparative Modelling Study of New Robust Packaging Technology 1 mm2 VCSEL Packages and Their Mechanical Stress Properties," Micromachines, 13, 9, 1513, (13 Sep. 2022)(DOI: 10.3390/mi13091513)
7. A. Hiraiwa, S. Okubo, M. Ogura, Y. Fu, and H. Kawarada, “Capacitance–voltage characterization of metal–insulator–semiconductor capacitors formed on wide-bandgap semiconductors with deep dopants such as diamond,” Journal of Applied Physics 132, 125702-1/19 (Sep. 28, 2022). (DOI:10.1063/5.0104016)　
8. Y. Fu, Y.H. Chang, X. Zhu, A. Hiraiwa, R. Xu, Y. Xu, H. Kawarada, "300 mA/mm Drain Current Density P-Type Enhancement-Mode Oxidized Si-terminated (111) Diamond MOSFETs with ALD Al2O3 Gate Insulator", 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 121-124, (Jul. 2022) (DOI: 10.1109/ISPSD49238.2022.9813655)
9. Y. Fu, S. Kono, H. Kawarada, A. Hiraiwa, "Electrical Characterization of Metal/Al2O3/SiO2/Oxidized-Si-Terminated (C–Si–O) Diamond Capacitors," IEEE Transactions on Electron Devices, 69, 7, 3604-3610 (Jul. 2022) (DOI: 10.1109/TED.2022.3175940)
10. Y. Fu, Y.H. Chang, X. Zhu, R. Xu, Y. Xu, H. Kawarada "Normally-off Oxidized Si-terminated (111) Diamond MOSFETs via ALD-Al2O3 Gate Insulator with Drain Current Density Over 300 mA/mm", IEEE Transactions on Electron Devices, 69, 8, 4144-4152 (Aug. 1, 2022) (DOI: 10.1109/TED.2022.3186865)
11. R. Alhasani, T. Yabe, Y. Iyama, N. Oi, S. Imanishi, Q. N. Nguyen, H. Kawarada. "An Enhanced Two-Dimensional Hole Gas (2DHG) C-H Diamond with Positive Surface Charge Model for Advanced Normally-Off MOSFET Devices", Scientific Reports, 12, 1, 4203 (Dec. 2022) (DOI: 10.1038/s41598-022-05180-4)
12. S. Falina, H. Kawarada, A. A. Manaf, M. Syamsul, "High Temperature Performance of Enhanced Endurance Hydrogen Terminated Transparent Polycrystalline Diamond FET", IEEE Electron Device Letters(Early Access), (May 16, 2022)(DOI: 10.1109/LED.2022.3175473)
13. Y. Fu, Y.H. Chang, S. Kono, A. Hiraiwa, K. Kanehisa, X. Zhu, R. Xu, Y. Xu, H. Kawarada, "-10 v Threshold Voltage High-Performance Normally-OFF C-Si Diamond MOSFET Formed by p+-Diamond-First and Silicon Molecular Beam Deposition Approaches", IEEE Transactions on Electron Devices, 69, 5, 2236-2242, (May 1, 2022)(DOI: 10.1109/TED.2022.3157655)
14. X. Zhu, S. Shao, Y.H. Chang, R. Zhang, S. Y. Y. Chung, Y. Fu, T. Bi, Y. Huang, K. An, J. Liu, C. Li, H. Kawarada "-400 mA mm-1Drain Current Density Normally-Off Polycrystalline Diamond MOSFETs", IEEE Electron Device Letters, 43, 5, 789-792, (May 1, 2022)(DOI: 10.1109/LED.2022.3160354)
15. X. Zhu, T. Bi, X. Yuan, Y.H. Chang, R. Zhang, Y. Fu, J. Tu, Y. Huang, J. Liu, C. Li, H. Kawarada, "C-Si interface on SiO2/(1 1 1) diamond p-MOSFETs with high mobility and excellent normally-off operation", Applied Surface Science, 593, 153368. (Aug. 15, 2022)(DOI: 10.1016/j.apsusc.2022.153368)
16. Y. Shintani, H. Kawarada, "Fluorine-Terminated Polycrystalline Diamond Solution-Gate Field-Effect Transistor Sensor with Smaller Amount of Unexpectedly Generated Fluorocarbon Film Fabricated by Fluorine Gas Treatment", Materials, 15, 9, 2966 (Apr. 2022), (DOI:https://doi.org/10.3390/ma15092966)
17. B. Liu, T. Bi, Y. Fu, K. Kudara, S. Imanishi, K. Liu, , B. Dai, , J. Zhu,  H. Kawarada, "MOSFETs on (110) C-H Diamond: ALD Al2O3/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization", IEEE Transactions on Electron Devices. 69, 3, 949-955 7, (Mar 1, 2022), (DOI: 10.1109/TED.2022.3147152)
18. K. Kudara, M. Arai, Y.Suzuki, A.Morishita, J. Tsunoda, A. Hiraiwa, H. Kawarada, " Over 1 A/mm drain current density and 3.6 W/mm output power density in 2DHG diamond MOSFETs with highly doped regrown source/drain", Carbon. 188, 220-228, (March 2022), https://doi.org/10.1016/j.carbon.2021.11.034
19. S. Kawaguchi, R. Nomoto, H. Sato, T. Takarada, Y. H. Chang , H. Kawarada, "pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-terminated Diamond Solution Gate Field Effect Transistors" Sensors, 22, 1807 (Feb. 2022), ( https://www.mdpi.com/1424-8220/22/5/1807)
20. J. Tsunoda, N. Niikura, K. Ota, A. Morishita, A. Hiraiwa, and H. Kawarada, " 580 V Breakdown Voltage in Vertical Diamond Trench MOSFETs with a P- -drift Layer" IEEE Electron Device Letters, 43, 1, 88-91 (Jan. 2022), （DOI: 10.1109/LED.2021.3131038)