WASEDA UNIVERSITY
              
 
 
 

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2020年

  1. S. Falina, K. Tanabe, Y. Iyama, K. Tadenuma, T. Bi, Y. H. Chang, A. A. Manaf, M. Syamsul, H. Kawarada, "Feasibility Study of TiOx Encapsulation of Diamond Solution-Gate Field-Effect Transistor Metal Contacts for Miniature Biosensor Applications", Physica Status Solidi (A) Applications and Materials Science, 217, 23, 2000634(2020 Dec.)( https://doi.org/10.1002/pssa.202000634)
  2. X. Yang, M. Pristovsek, S. Nitta, Y. Liu, Y. Honda, Y.Koide, Hiroshi Kawarada, Hiroshi Amano, "Epitaxial Combination of Two-Dimensional Hexagonal Boron Nitride with Single-Crystalline Diamond Substrate", ACS Applied Materials & Interfaces, 12, 41, 46466-46475 (Oct. 14, 2020) (https://doi.org/10.1021/acsami.0c11883)
  3. T. Bi, J. Niu, N. Oi, M. Inaba, T. Sasaki, H, Kawarada, "Application of 2DHG Diamond p-FET in Cascode with Normally-off Operation and Breakdown Voltage of Over 1.7 kV", IEEE Trans. Electron Devices, 67, 10, 4006-4009,(Oct. 2020)(DOI: 10.1109/TED.2020.3019020) .
  4. Z. Chen, Y. Fu, H. Kawarada, Y. Xu, "Microwave diamond devices technology: Field-effect transistors and modeling", International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, (Aug.26  2020) (DOI: 10.1002/jnm.2800)
  5. K. Horikawa, S. Okubo, H. Kawarada, A. Hiraiwa, "Postdeposition annealing effect on the reliability of atomic-layer-deposited Al2O3 films on GaN", Journal of Vacuum Science & Technology B, 38, 062207/1-14 (Nov/Dec 2020, Published Online: Oct. 9,2020)(DOI: 10.1116/6.0000531)
  6. Y.H. Chang, Y. Iyama, K. Tadenuma, S. Kawaguchi, T. Takarada, S. Falina, M. Syamsul, H. Kawarada,  "Over 59 mV/pH Sensitivity with Fluorocarbon Thin Film via Fluorine Termination for pH Sensing Using Boron-doped Diamond Solution-gate Field-effect Transistors",  Physica Status Solidi A , 2020, 2000278/1-6  (https://doi.org/10.1002/pssa.202000278)
  7. W. Fei, K. Wei, A. Morishita, H.-X. Wang, H. Kawarada, "Local initial heteroepitaxial growth of diamond (111) on Ru (0001)/c-sapphire by antenna-edge-type microwave plasma chemical vapor deposition", Applied Physics Letters, 117, 112102/1-4 (Sept. 18, 2020).(DOI:10.1063/5.0008287)
  8. A. Reem, A. Mohammed, Quang N. Nguyen, H. Kawarada, "Characterization and analysis of two-dimensional hydrogenated nanocrystalline-diamond metal oxide semiconductor field effect transistor (MOSFET) using different surface charge models with device simulation", NANO 2020 - 20th IEEE International Conference on Nanotechnology, Conference Proceeding, IEEE Computer Society, 376-377 (Jul. 2020) (DOI: 10.1109/NANO47656.2020.9183658)
  9. W. Fei, T. Bi, M. Iwataki, S. Imanishi1, H. Kawarada, "Oxidized Si terminated diamond and its MOSFET operation with SiO2 gate insulator", Applied Physics Letters, 116, 212103/1-4, (29 May, 2020). (DOI:10.1063/1.5143982)
  10. N. M. Nashaain, S. Falina, Y. Kitabayashi, D. Matsumura, A. A. Manaf, Z. Hassan, M. Syamsul, H. Kawarada, "Reliability of 2DEG Diamond FET by Harsh-Continuous Stress Voltage Approach", 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 – Proceedings, Institute of Electrical and Electronics Engineers Inc.,(2020 Apr.) (DOI: 10.1109/EDTM47692.2020.9117897)
  11. A. Hiraiwa, K. Horikawa, H. Kawarada "Dynamic space-charge-controlled field emission model of current conduction in metal–insulator–semiconductor capacitors", Journal of Applied Physics, 127, 6, 065307-1/17, (Feb. 12, 2020) (https://doi.org/10.1063/1.5138729)
  12. M. Iwataki, N. Oi, K. Horikawa, S. Amano, J. Nishimura,T. Kageura, M. Inaba, A. Hiraiwa, H. Kawarada, "Over 12000 A/cm2 and 3.2 mΩcm2 Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET" IEEE Electron Dev. Lett., 41, 1, 111-114 (Jan. 2020). (DOI: 10.1109/LED.2019.2953693)
  13. 川原田 洋,蓼沼 佳斗,寳田 晃翠, "ダイヤモンドSGFET により検出される塩水中の信号伝搬とその水中通信の可能性", ニューダイヤモンド, 138 (36-3), 28-31  (トピックス) (July 2020)
  14. 川原田 洋, "世界最初のトランジスタは,天然ダイヤモンド表面で可能だった  宝石よりも魅力的なデバイスへ向けて", ニューダイヤモンド, 137 (36-2), 1-2  (巻頭言) (Apr. 2020)