WASEDA UNIVERSITY
            
 
 
 

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2012年

国際学会

1) R. Ruslinda, K. Tanabe , S. Ibori , X. Wang , H. Kawarada, “The Effects of Diamond FET-based RNA aptamer sensing for Real Sample HIV-1 Tat Protein detection”, Biosensors 2012, Cancun, Mexico, May 2012

2) H. Kawarada, S.Kurihara, R. Kanomata, X. Wang, S. Ibori, Y. Shintani and A.Hiraiwa; “Heavily Boron-doped DianlOnd and Its Application to Electron Device in Harsh Environment”, NDNC2012, San Juan, Puerto Rico, May 2012 

3) S.Kurihara, R.Kanomata, H.Tsuboi, D.Utsunomiya, T.Yamaguchi, Y.Takano, H.Kawarada, "Evaluation for properties of superconducting diamond (111) thin film with Tc(offset) above 10K and its anisotropic effect due to the uniaxial strain", Materials & Mechanisms of Superconductivity Conference, Washington D.C., USA, July 2012

4) R. Kanomata, S. Kurihara, D. Utsunomiya, H. Tsuboi, T. Yamaguchi, Y. Takano, H.Kawarada,
"Electrical characteristic evaluation of SNS junction by heavlily and lightly Boron-doped diamonds",Materials & Mechanisms of Superconductivity Conference, Washington D.C., USA, July 2012

5) M. Inaba, K. Oohara, T. Ochiai, N. Tomatsu, A. Hiraiwa, M. Kusunoki,H. Kawarada "CNT contact resistivity evaluation from nano size LSI via to power SiC device using conductive AFM" IUMRS-International Conference on Electronic Materials (IUMRS-ICEM 2012), Yokohama, Japan, Sep. 2012

6)A. Daicho, T. Saito, S. Sato, T. Kobayashi, R. Nomura, A. Hiraiwa, and H.Kawarada ,“Atomic layer deposition of Al2O3 for passivating hydrogen-terminated diamond”International Union of Materials Research Societies -International Conference on Electronic Materials 2012,Yokohama,Japan,September 2012

7)D.Utsunomiya, Yuki Yokoyama, R.Kanomata, H.Kawarada, "AlN heteroepitaxial growth on diamond(111) by Molecular Beam Epitaxy", IUMRS-ICEM2012, Yokohama, Japan, September 2012

8)T.Naruo, T.Ono, Y.Yokoyama, A.Hiraiwa, H.Kawarada "Diamond MOSFET with O-terminated thin boron doped channel" International Union of Material Research Societies - International Conference on Electronic Materials 2012, Yokohama, Japan, September 2012

9)Y. Yokoyama, R. Kanomata, D. Utsunomiya, T. Hakamata, W. Ono, A. Hiraiwa, and H. Kawarada, “Electric property of diamond surface covered with AlN grown by MBE”,IUMRS-ICEM, Yokohama, Japan, September 2012

10)A. Hiraiwa, A. Daicho, T. Saito, Y. Yokoyama, D. Utsunomiya, and H. Kawarada, "High-reliability passivation of 2D hole gas on H-terminated diamond surface," International Conference on Diamond and Carbon Materials, Granada, Spain, September 2012

11)Y. Shintani, S. Ibori, R.A. Rahim, M. Myodo, H. Kawarada, "Study of the characteristics of boron-doped polycrystalline diamond channel solution-gate FET used in harsh environment", International Conference on Diamond and Carbon Materials, Granada, Spain, September 2012

12) M. Inaba, M. Shibuya, K. Oohara, T. Ochiai, Y. Masuda, A. Hiraiwa, M.Kusunoki, H. Kawarada ”Contact resistivity evaluation of dense CNT forest using conductive AFM” 2012 MRS Fall Meeting & Exhibit, Boston, MA, USA, Nov. 2012

13) A. Daicho, T. Saito, S. Kurihara, A. Hiraiwa, and H.Kawarada“High-reliability passivation of hydrogen-terminated diamondsurface using atomic layer deposition of Al2O3” 2012 MRS Fall Meeting & Exhibit, Boston, MA, USA, November. 2012

14) D.Utsunomiya, R.Kanomata, Yuki Yokoyama, A.Hiraiwa, H.Kawarada, "The heteroepitaxial AlN growth on (111)diamond by MBE", 2012 MRS Fall Meeting&Exhibit, Boston, USA, November 2012

15) T.Naruo, A.Daicho, T.Saito, A.Hiraiwa, H.Kawarada "High-temperature operation of hydrogen-terminated diamond MOSFETs with Al2O3 passivation" 2012 MRS Fall Meeting & Exhibit, Boston, MA, USA, November 2012

16) Y. Yokoyama, R. Kanomata, D. Utsunomiya, T. Hakamata, W. Ono, A. Hiraiwa, and H. Kawarada, “P-type conduction in MBE-grown-AlN/diamond system”,2012 MRS Fall meeting, Boston, USA, November 2012