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2016

国際学会

  1. T. Kageura, M. Shibata,  Y. Sasama, T. Yamaguchi, Y. Takano, H. Kawarada, "Lattice strain in superconducting boron-doped diamond", IWSRFM 2016 (International Workshop on Superconductivity and Related Functional Materials), Tsukuba, Japan, Dec. 20-22, 2016. (oral)
  2. M. Hideko, T. Kageura, I. Tuyuzaki, M. Shibata, Y. Kitabayashi, Y. Sasama, T. Yamaguchi, Y. Takano, M. Tachiki, S. Ooi, K. Hirata, S. Arisawa, H. Kawarada, “Boron-doped diamond SQUID with regrowth-induced step edge structure Josephson junction”, IWSRFM 2016(International Workshop on Superconductivity and Related Functional Materials), Tukuba, Japan, Dec.20-22, 2016. (poster)
  3. A. Hiraiwa, D. Matsumura, H. Kawarada,"Atomic-Layer-Deposition Temperature Effect on Current Conduction in Al2O3 Films as Investigated Using Space-Charge-Controlled Field Emission Model", 2016 MRS Fall Meeting & Exhibit, Boston, USA, Nov. 27-Dec. 2, 2016. (oral)
  4. M. Inaba, H. Yamano, T. Kageura, and H. Kawarada, "Vertically Oriented Graphite Layer Formed on (001) Diamond by Hot Implantation and High Temperature Annealing", 2016 MRS Fall Meeting& Exhibit, Boston, USA, Nov. 27-Dec. 2, 2016. (poster)
  5. T. Kudo, Y. Kitabayashi, D. Matsumura, Y. Hayashi, M. Inaba, A. Hiraiwa H. Kawarada, "Over 2000 V Breakdown Voltage of Normally-off C-H Diamond MOSFETs with high threshold voltage", 2016 MRS Fall Meeting & Exhibit, Boston, USA, Nov. 27- Dec 2, 2016. (oral)
  6. M. Hideko, T. Kageura, I. Tuyuzaki, M. Shibata, Y. Kitabayashi, Y. Sasama, T. Yamaguchi, Y. Takano, M. Tachiki, S. Ooi, K. Hirata, S. Arisawa, H. Kawarada " Superconducting Boron-doped Diamond Josephson Junction with Regrowth-induced Step Edge Structure", 2016 MRS Fall Meeting & Exhibit, Boston, USA, Nov. 27-Dec. 2, 2016. (oral)
  7. H. Yamano, K. Kato, T. Kageura, M. Inaba, T. Okada, I. Higashimata, M. Haruyama, T. Tanii, S. Onoda, W. Kada, O. Hanaizumi, T. Teraji, J. Isoya, H. Kawarada, "Charge State Stabilization of Shallow Nitrogen Vacancy Centers in Diamond by Oxygen Ambient Surface Modification", 2016 MRS Fall Meeting & Exhibit, Boston, USA, Nov. 27-Dec. 2, 2016. (poster)
  8. K. Igarashi, T. Naramura, S. Falina, S. Abe, M. Inaba, Y. Shintani, A. Hiraiwa, H. Kawarada, "Common-Gate Measurement System of Solution-Gate Field-Effect Transistor for pH Sensing", 2016 MRS Fall Meeting & Exhibit, Boston, USA, Nov. 27-Dec. 2, 2016. (oral)
  9. K. Kato, H. Yamano, T. Kageura, M. Inaba, M. Haruyama, Evi Suaebah, O.Hanaizumi, W. Kada, S. Onoda, T. Teraji, J. Isoya, H. Kawarada, "The Electron States of Shallow NV Centers after DNA Immobilization on Partially NH 2 Terminated Diamond", 2016 MRS Fall Meeting & Exhibit, Boston, USA, Nov. 27-Dec. 2, 2016. (oral)
  10. T. Muta, N. Oi, M. Inaba, T. Saito, D. Matsumura, T. Kudo, A. Hiraiwa, H. Kawarada "Vertical MOSFETs-Using C-H Diamond with Trench-Channel " , 2016 MRS Fall Meeting & Exhibit, Boston, USA, Nov. 27-Dec. 2, 2016 (oral)
  11. W. Fei, M. Inaba, Y. Hirano, H. Masuda, H. Kawarada, "Diamond Nanocylinder Forest Formed by Porous Alumina Template", 2016 MRS Fall Meeting & Exhibit, Boston, USA, Nov. 27-Dec. 4, 2016.(poster)
  12. T. Kageura, M. Hideko, M. Shibata, Y. Sasama, T. Yamaguchi, Y. Takano, H.Kawarada, "Stacking Faults and Twins Induced by Lattice Relaxation in Superconducting Boron-Doped Diamond Synthesized by Microwave Plasma Chemical Vapor Deposition", 2016 MRS Fall Meeting & Exhibit, Boston, USA, Nov. 27- Dec. 2, 2016 (poster)
  13. T. Kamiya, K. Ide, H. Hiramatsu (TIT), Y. Setsuhara (Osaka Univ.), A. Hiraiwa, H. Kawarada (Waseda Univ.), H. Hosono (TIT), “Development of New Amorphous Oxide Semiconductor by Controlling Defects”, iLIM-1, Osaka, Japan, Oct. 17-18, 2016 (poster).
  14. K. Ide, M. Ota (TIT), K. Takenaka, Y. Setsuhara (Osaka Univ.), A. Hiraiwa, H. Kawarada (Waseda Univ.), H. Hiramatsu, H. Hosono, T. Kamiya (TIT), “Complementary Study for Effects of Annealing on Density and Pore Structures in Amorphous In-Ga-Zn-O Thin-Film Transistors”,  iLIM-1, Osaka, Japan, Oct. 17-18, 2016 (poster).
  15. A. Hiraiwa, D. Matsumura, S. Okubo, H. Kawarada, "Current Conduction in Atomic-Layer-Deposition Al2O3 as Investigated Based on Space-Charge-Controlled Field Emission Model",  iLIM-1, Osaka, Japan, Oct. 17-18, 2016 (poster).
  16. T. Kudo, Y. Kitabayashi, D. Matsumura, Y. Hayashi, M. Inaba, A. Hiraiwa H. Kawarada, "Gate Threshold Voltage Control of C-H Diamond MOSFETs", International Conference on Solid State Devices and Materials, Tsukuba, Japan, Sep. 26-29, 2016. (oral)
  17. M. Hideko, T. Kageura, I. Tuyuzaki, M. Shibata, Y. Kitabayashi, Y. Sasama, T. Yamaguchi, Y. Takano, M. Tachiki, S. Ooi, K. Hirata, S. Arisawa and H. Kawarada “Superconducting (111) Boron-doped Diamond Josephson Junction with Regrowth-induced (001) Step Edge Structure”, 2016 International Conference on Solid State Devices and Materials, Tukuba, Japan,, Sep. 26-29, 2016 . (oral)
  18. T. Muta, T. Saito, M. Inaba, D. Matsumura, T. Kudo, Y. Kitabayashi, A. Hiraiwa, H. Kawarada "Vertical MOSFET using C-H Diamond with Trench-channel" , 2016 International Conference on Solid State Devices and Materials. Tsukuba, Japan, Sep. 26-29, 2016 (oral)
  19. H. Yamano, K. Kato, T. Kageura, M. Inaba, T. Okada, I. Higashimata, M. Haruyama, T. Tanii, S. Onoda, W. Kada, O. Hanaizumi, T. Teraji, J. Isoya, H. Kawarada, "Coherence Properties and Charge Stability of Shallow Implanted Nitrogen Vacancy Centers in 12C enriched Diamond", 2016 International Conference on Solid State Devices and Materials, Tsukuba, Japan, Sep. 26-29, 2016 . (oral)
  20. H.Kawarada, Y.Kitabayashi, M.Syamsul N.S.B., M.Shibata, D.Matsumura, T.Kudo, A.Hiraiwa, "Planer Diamond P-channel MOSFETs with Breakdown Voltage VB > 1.8kV and High Drain Current Density by 2DHG", 2016 International Conference on Solid State Devices and Materials, Tsukuba, Japan, Sep. 26-29, 2016 . (oral, invited)
  21. M.Syamsul, Y.Kitabayashi, D.Matsumura, H.Kawarada,"High endurance white polycrystalline diamond FET for power device application",2016. International Conference on Diamond and Carbon Materials. Le Corum, Montpellier, France. 4-8 September 2016 (Oral)
  22. M.Syamsul, Y.Kitabayashi, D.Matsumura, H.Kawarada,"Cost effective white polycrystalline diamond FET using 2D hole gas",2016. NANO KOREA 2016 Symposium. KINTEX, Ilsan, Korea, 13 – 15 July 2016. (Oral)
  23. H. Kawarada, "Diamond Power MOSFETs using 2 Dimensional Hole Gas", 2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2016), Hakodate, Japan, 4-6 July 2016 (oral, invited)
  24. H. Kawarada, T. Yamada, D. Xu, Y. Kitabayashi, M. Shibata, D. Matsumura, M. Kobayashi, T. Saito, T. Kudo, M. Inaba, A. Hiraiwa, "Diamond MOSFETs Using 2D Hole Gas with 1700V Breakdown Voltage", 28th International Symposium on Power Semiconductor Devices and ICs, Prague, Czech Republic, 12-16 June 2016. (oral)
  25. H. Kawarada, Y. Kitabayashi , M. Shibata , D. Matsumura , T. Saito , T. Kudo , T. Muta, M. Inaba , A. Hiraiwa, "Diamond as Power Electronics Platform", 10th International Conference on New Diamond and Nano Carbons(NDNC2016), The Westin Xi’an, China, 22-26 May 2016. (oral, invited)
  26. W. Fei, M.Inaba, Y.Hirano, H.Masuda , H.Kawarada, "Growth of diamond nanorods using antenna-edge-type microwave plasma-assisted chemical vapor deposition", 10th International Conference on New Diamond and Nano Carbons(NDNC2016), The Westin Xi’an, China, 22-26 May 2016.  2016.(oral)
  27. E. Suaebah , Y. Seshimo, T. Naramura, M. Hasegawa , H. Kawarada, "Amine termination of nanocrystalline diamond surface by nitrogen radical beam (NRB) for biosensing application", 10th International Conference on New Diamond and Nano Carbons(NDNC2016), The Westin Xi’an, China, 23-26 June 2016.(oral・Young Scholar Award)
  28. S. Kono, M. Inaba, A. Hiraiwa, and H. Kawarada, "Electric properties of Au ohmic-contact on hydrogen-terminated surface-conductive diamond (001)," 10th Intern. Conf. New Diamond Nano Carbonds, Xi'an China, May 22-26, 2016. (oral)
  29. T.Kageura, M.Shibata, M.Hideko, Y.Sasama, T.Yamaguchi, Y.Takano, H.Kawarada, "Physical Properties of Superconducting Boron-Doped Diamonds", 2016 MRS Spring Meeting & Exhibit, Phoenix, USA, March 28-April 1, 2016. (oral)
  30. H.Kawarada, Y.Kitabayashi, M.Shibata, Y.Hayashi, A.Hiraiwa, "Normally-Off C-H Diamond MOSFET with the Breakdown Voltage of Above 2000V", 2016 MRS Spring Meeting & Exhibit, Phoenix, USA, March 28-April 1  (oral)
  31. E. Suaebah, T. Naramura, M. Hasegawa, H. Kawarada."Diamond functionalization for Biosensing Application", 2016. The 6th Basic Science International Meeting. Malang, Indonesia, 2-3 March 2016. (oral)
  32. E. Suaebah, T. Naramura,H. Kawarada, "Direct partial CH3 termination into carboxyl terminated diamond surface for biosensor",2016.The 6th Basic Science International Meeting. Malang, Indonesia, 2-3 March 2016. (poster)