WASEDA UNIVERSITY
　　　　　　　　　　　　
 
 
 

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2019

国際学会

  1. T. Tatsuishi, T. Sonoda, K. Kanehisa, K. Kawakatsu, Y. Hata, K. Nagaoka, Y. Ishii, T. Tanii, S. Onoda, A.Stacey, J. Isoya, S. Kono, H. Kawarada, "Transformation of Nitrogen Adsorbed on (111) Diamond Surface into Highly Aligned 2-Dimensional NV Ensemble", The 2nd International Forum on Quantum Metrology and Sensing (2nd IFQMS), Kyoto, Japan, Dec. 17-18, 2019 (Poster, Dec. 17, 2019) 
  2. H. Kawarada, "Power Diamond p-FETs for High Frequency and Power Complementary Circuits with Other Wide Bandgap Semiconductor n-FETs", The 2nd International Workshop on Plasma Technology for Diamond Growth and Diamond Device Fabrication as special workshop of APSPT-11, Kanazawa, Japan, Dec. 13, 2019. (Poster, Dec. 13, 2019)
  3. J. Nishimura, M. Iwataki, N. Oi, A. Hiraiwa, H. Kawarada, "(111) Vertical-type 2DHG Diamond MOSFETs with Hexagonal Trench Structures", 2019 MRS Fall Meeting & Exhibit, Boston, USA, Dec. 1-6, 2019. (Oral, Dec. 3, 2019) 
  4. K. Tadenuma, Y. Iyama, Y. Chang, Y. Shintani, H. Kawarada, "Short Distance Electric Seawater Wireless Communication utilizing Diamond Solution Gate FET", 2019 MRS Fall Meeting & Exhibit, Boston, USA, Dec. 1-6, 2019. (Oral, Dec. 2, 2019)
  5. T. Tatsuishi, T. Sonoda, J. J. Buendia, T. Kageura, Y. Ishii, K. Nagaoka, Y. Hata, K. Kawakatsu, T. Tanii, M. Haruyama, S. Onoda, A. Stacey, T. Teraji, J. Isoya, S. Kono, H. Kawarada"Aligned Two-Dimensional NV Ensemble Fabrication from (111) Nitrogen-Terminated Surface Embedded by High Purity Diamond", 2019 MRS Fall Meeting & Exhibit, Boston, Massachusetts, Dec. 1-6, 2019. (Oral, The Second Best Oral Presentation, Dec. 4, 2019)
  6. K. Kudara, S. Imanishi, K. Horikawa, A. Hiraiwa, H. Kawarada, "1.4×107 cm/s Carrier Velocity and RF Power Performance Biased at −70 V for 2DHG Diamond MOSFETs with Thick ALD-Al2O3 Film", 2019 MRS Fall Meeting & Exhibit, Boston, USA, Dec. 1-6, 2019. (Oral, Dec. 2, 2019)  
  7. A. Morishita, S. Amano, T. Kageura, M. Tachiki, S. Ooi, S. Arisawa, Y. Takano, H. Kawarada, "Boron-doped Diamond Superconducting Quantum Interference Devices Operating above Liquid Helium Temperature", 2019 MRS Fall Meeting & Exhibit, Boston, USA, Dec. 1-6, 2019. (Oral, Dec. 3, 2019)
  8. Reem Alhasani1,Mohammed Alhasani1,T. Yabe1,H. Kawarada, "Normally off Hydrogen Terminated Diamond Field Effect Transistor (C-H MOSFET) Device with Deep Donor Doping Using Nitrogen Termination", 2019 MRS Fall Meeting & Exhibit, Boston, USA, Dec. 1-6, 2019. (Oral, Dec. 3, 2019)
  9. A. Hiraiwa, S. Okubo, K. Horikawa, H. Kawarada, "Under-gate-dipole-controlled current conduction in high-permittivity insulators", 2019 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY" (2019 IWDTF). Paper ID:   1011, Tokyo Institute of Technology, Tokyo, Japan, Nov. 18-20, 2019, (Poster, Nov. 18,2019)
  10. A. Morishita, I. Tsuyuzaki, T. Kageura, S. Amano, Y. Takano, M. Tachiki, S. Ooi, S. Arisawa and H. Kawarada, “Boron-doped Diamond Superconducting Quantum Interference Devices Operating up to 10 K”, 2019 International Conference on Solid State Devices and Materials (SSDM2019), Aichi, Japan, Sept. 2-5, 2019. (Poster)
  11. K. Kudara, S. Imanishi, K. Horikawa, A. Hiraiwa, H. Kawarada, " RF Power Performance of 2DHG Diamond MOSFETs with thick ALD-Al2O3 Film" 2019 International Conference on Solid State Devices and Materials (SSDM2019), Nagoya, Japan, Sept. 2-5, 2019 (oral, Sept. 5, 2019).
  12. J. Nishimura, M. Iwataki, N. Oi, A. Morishita, A. Hiraiwa, H. Kawarada,  "(111) Vertical-type 2DHG Diamond MOSFETs with Hexagonal Trench Structures"  2019 International Conference on Solid State Devices and Materials (SSDM2019), Nagoya, Japan, Sept. 2-5, 2019 (Oral, Sept. 5, 2019).
  13. Tetsuya Tatsuishi, Takahiro Sonoda, Jorge J. Buendia, Taisuke Kageura, Kazuto Kawakatsu, Yuki Hata, Kiro Nagaoka, Yu Ishii, Takashi Tanii, Moriyoshi Haruyama, Keisuke Yamada, Shinobu Onoda, Wataru Kada, Osamu Hanaizumi, Alastair Stacey, Tokuyuki Teraji, Junichi Isoya, Shozo Kono and Hiroshi Kawarada, "New Delta Doping of Nitrogen for 2 Dimensionally Condensed NV Centers Using Nitrogen Terminated Diamond Followed by High Purity Diamond Growth", 2019 International Conference on Solid State Devices and Materials(SSDM2019), Aichi, Japan, Sept. 9-3, 2019. (Oral).
  14. K. Tadenuma, Y. Iyama, Y. Chang, Y. Shintani, H. Kawarada, "Electric Signal Transmission in Seawater using Diamond Solution Gate FET as Receiver", 2019 International Conference on Solid State Devices and Materials(SSDM2019), Aichi, Japan, Sept. 2-5, 2019. (Oral)
  15. S. Imanishi, K. Kudara, K. Horikawa, A. Hiraiwa, H. Kawarada, "Diamond MOSFETs with ALD-Al2O3 Exhibiting RF Power Density of 3.8 W/mm and Carrier Velocity of 1.0 × 107 cm/s on Polycrystalline Diamond", TWHM 2019 13th Topical Workshop on Heterostructure Microelectronics, Toyama, Japan, Aug. 26-29, 2019, (poster), Aug. 27, 2019.
  16. T.Bi, T.Kudo, A.Yamamoto, T.Yabe, K.Horikawa, T.Sasaki, A.Hiraiwa, H.Kawarada,"Diamond Cascode Application for Diamond p-FET GaN n-FET Half-Bridge Complementary Inverter", TWHM 2019 13th Topical Workshop on Heterostructure Microelectronics, Toyama, Japan, Aug. 26-29, 2019, (poster), Aug. 27, 2019.
  17. M. Iwataki, N. Oi, J. Nishimura, K. Horikawa, A. Hiraiwa, H. Kawarada, "Vertical-Type 2-Dimensional Hole Gas Diamond MOSFET with IDS: ~10000 A/cm2 and specific RON: 3.2 mΩcm2", TWHM 2019 13th Topical Workshop on Heterostructure Microelectronics, Toyama, Japan, Aug. 26-29, 2019, (poster, Aug. 27, 2019)
  18. H. Kawarada, "High Frequency, High Power Diamond p-FETs Including Vertical Structures for High Voltage and High Speed Complementary Circuits" EM-NANO2019, Shinsyu University, Nagano, Japan, Jun. 19-22, 2019. (Invited)
  19. H. Kawarada, "High Frequency, High Power Diamond p-FETs for High Speed & Power Complementary Circuits with GaN or SiC n-FETs", (SCDE2019) Conference on Single Crystal Diamond and Electronics, Xi’an, China, Jun. 9-12, 2019. (Plenary Lecture)
  20. H. Kawarada, "Toward New Generation Power Electronics with Complementary FET’s Composed of Diamond p-FET and Nitride n-FETs", International Conference on Semiconductor Materials and Technology, Penang, Malaysia, May 29-30, 2019. (Keynote Speech)
  21. W. FEI, M. Inaba, H. Hoshino, I. Tsuyuzaki, S. Kawai, M. Iwataki, H. Kawarada,  ”Point-arc remote plasma CVD for single crystal diamond site-selective growth”, Hasselt Diamond Workshop 2019 - SBDD XXIV, Hasselt, Belgium, Mar. 13-15, 2019. (Poster, March 13)
  22. T. Kageura, I. Tsuyuzaki, S. Amano, A.Morishita, M. Tachiki, S. Ooi, S. Arisawa, Y. Takano, H. Kawarada, "Diamond Josephson Junctions and SQUID for Superconducting Q-bit", The 1st International Forum on Quantum Sensing (IFQS2019), Tokyo Institute of Technology, Tokyo, Japan, Feb. 17-19, 2019 (Poster, Best Poster Award, Feb. 18, 2019)
  23. T. Sonoda, S. Kawai, T. Tatsuishi, H. Yamano, J. J. Buendia, T. Kageura, Y. Ishii, K. Nagaoka, R. Fukuda, T. Tanii, M. Haruyama, K. Yamada, S. Onoda, T. Ohshima, W. Kada, O. Hanaizumi, A. Stacey, T. Teraji, S. Kono, J. Isoya, H. Kawarada, “Nitrogen-Terminated Diamond Surface with Shallow NV Centers for Nanoscale NMR”, The 1st International Forum on Quantum Sensing (IFQS2019), Tokyo, Japan, Feb. 17-19, 2019 (Poster, Feb. 18, 2019).