WASEDA UNIVERSITY
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2014”N

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The 5th NIMS/MANA-Waseda University International Symposium, Tsukuba, Japan, 24@ March 2014. [‚PŒ]

1) M. Inaba, K. Suzuki, M. Shibuya, C.-Y. Lee, M. Myodo, A. Hiraiwa, Y. Masuda, W. Norimatsu, M. Kusunoki, H. Kawarada, "CNT/SiC Interface for Power Device Applications"

NT14: The Fifteenth International Conference on the Science and Application of Nanotubes, University of Southern California, Los Angeles, CA, USA  2-6 June, 2014. [‚PŒ]

2) M. Inaba, C.-Y. Lee, K. Suzuki, M. Shibuya, M. Myodo, A. Hiraiwa, W. Norimatsu, M. Kusunoki, H. Kawarada "In-plane Conduction of Dense Carbon Nanotube Forest Formed on Silicon Carbide"

2014 International Symposium on Single Crystal Diamond Electronics and the Fourth Chinese Vacuum Forum(SCDE 2014), Xian, China, 13-17 June, 2014. [‚PŒ]

3) H. Kawarada, " Diamond Field Effect Transistors for Power Electronics"iinvitedj

IUMRS-ICA2014, International Union of Materials Research Societies, International Conference in Asia 2014(The 15th IUMRS-ICA ),Fukuoka,Japan,24-30 August 2014. [7Œ]

4) M. Inaba, C.-Yu Lee, K. Suzuki, M. Shibuya, M.Myodo, A. Hiraiwa, W. Norimatsu, M. Kusunoki, H.Kawarada, "In-plane conductivity of dense carbon nanotube forest formed by silicon carbide surface decomposition method"

5) K. Suzuki, M. Inaba, M. Shibuya, C.-Yu Lee, M. Myodo, A. Hiraiwa, W. Norimatsu, M. Kusunoki, H.Kawarada "Evaluation of the contact resistivity and Schottky barrier height at CNT/SiC interface by top contact electrode"

6) Y. Seshimo, T. Hakamata, W. Ono, Y. Yokoyama, D. Utsunomiya, A. Hiraiwa, H.Kawarada, "Surface structure of (111) diamond with recovered surface conduction after heat"

7) T.Yamada, T.Naruo, H.Tsuboi, D.Xu, A.Daicho, T.Saito, K.Kuruma, A.Hiraiwa, H.Kawarada
"600 V Breakdown voltage of C-H diamond MOSFETs with thick Al2O3 gate insulator"

8) D. Xu, H. Tsuboi, T. Naruo, T. Yamada, A. Daicho, T. Saito, K. Kuruma, A. Hiraiwa, H. Kawarada  "Wide Temperature (10|673 K) Operation of C-H Diamond MOSFETs"

9) M. Kobayashi,Y. Shintani, M. Myodo, H. Kawarada "Fluorine-terminated thin boron-doped diamond Solution Gate FET"

10) T. Kageura, M. Koga, T. Yamaguchi, Y. Takano, H. Kawarada, ”Superconductivity of Heavily Boron-doped Diamond (111)@by Spherical-resonator-Micro-wave-Plasma CVD”

65th Annual Meeting of the International Society of Electrochemistry, Lausanne, Swiss,31 Aug.-5 Sept.2014 [‚PŒ]

11) Y. Shintani, T. Saruya, H. Kawarada, "Characterization of Termination-controlled Boron-doped Polycrystalline Diamond Electrolyte-solution-gate Field-effect Transistor pH Sensor "

Japan-France Joint Diamond Workshop 2014,Kuju Joint Training Center, Oita Japan, 9.Oct.2014 [1Œ]

12) H. Kawarada, "C-H surface diamond FETs for high voltage (>500V) and wide temperature(-263Ž-+400Ž) operation,

The 5th International Symposium on Advanced Materials Development and Integration of Novel Structured Metallic and Inorganic Materials (AMDI-5), Tokyo, Nov.19, 2014. [2Œ]

12) M. Inaba, K. Suzuki, M. Shibuya, C.-Y. Lee, M. Myodo, Y. Hirano, A. Hiraiwa, W. Norimatsu, M. Kusunoki, H. Kawarada, “Carbon nanotube forest for ohmic and heat dissipative electrode of silicon carbide power devices”

13) T. Kageura, M. Shibata, T. Sasagawa, H.Kawarada, " Effect of Lattice Strain for Diamond superconductivity "

2014 MRS Fall Meeting & Exhibit,  Boston, USA, 30 Nov.-5 Dec., 2014,. [7Œ]

14) D. Xu, H. Tsuboi, T. Yamada, Y. Kitabayashi, T. Saito, D. Matsumura, A. Hiraiwa, H. Kawarada,,"Stable Performance of C-H Bonds Diamond MOSFETs at 10K-673K"

15) Y. Seshimo, T. Hara, Y. Hayashi, T. Hakamata, W. Ono, A.Hiraiwa, H. Kawarada.
"Electric Property of SiO2/Diamond Structure"

16) T. Yamada, H. Tsuboi, D. Xu, Y. Kitabayashi, T. Saito, D. Matsumura, A. Hiraiwa, H. Kawarada, "Nearly 1000V Breakdown Characteristic of C-H Diamond Lateral MOSFETs with Al2O3 Gate Insulator"

17) K. Suzuki, M. Inaba, M. Shibuya, C.-Y. Lee, M. Myodo, Y. Hirano, A. Hiraiwa, W. Norimatsu, M. Kusunoki, H. Kawarada, "Schottky Barrier Height of Carbon Nanotubes to n-Type 4H-SiC for High Power Device Electrodes

18) T. Kageura1, M. Shibata, T. Yamaguchi, Y. Takano, H. Kawarada, ”Analysis of Superconducting Boron-Doped Diamond Thin Film Using X-Ray Diffraction”

19) M. Kobayashi, M. Inaba, M.Syamsul.N.S.B., A. Hiraiwa, H. Kawarada."Fabrication of Diamond Rods for Power Device Application"

20) H. Kawarada, A. Hiraiwa, "Stability and Formation of Surface Hole Accumulation at C-H Diamond Surface"(invited)

IEDM 2014: IEEE International Electron Devices Meeting, San Francisco, CA, USA, 15-17 Dec., 2014.[1Œ]

21) H. Kawarada, H. Tsuboi, T. Yamada, D. Xu, T. Saito, A. Hiraiwa, "Wide Temperature (10K- 700K) and High Voltage (~1000V) Operation of C-H Diamond MOSFETs for Power Electronics Application"