WASEDA UNIVERSITY
　　　　　　　　　　　　
 
 
 

2023
2022
2021
2020
2019
2018
2017
2016
2015
2014
2013
2012
2011
2010
2009
2008
2007
2006
2005
2004
2003
2002
2001
2000
1999
1998
1997

    

2023

国際学会

  1. H.Kawarada , K. Ota, Y. Fu, K. Narita, X. Zhu, A. Hiraiwa, T. Fujishima, “Oxidized Silicon Terminated Diamond p-MOSFETs with Channel Mobility >150 cm2V-1s-1 and |VTH |> 3V Normally-off for Complementary Power Circuits,” 2023 IEDM San Francisco, USA, Dec.9-Dec.13,2023 (Oral, Dec.12, 2023)
  2. K. Narita, K. Ota, Y. Fu, C. Wakabayashi, A. Hiraiwa, T. Fujishima, H. Kawarada, "Normally-Off Vertical Diamond MOSFETs with Drain Current Density Over 200 mA/mm using Oxidized Si Terminated Diamond Channel Formed by Si Molecular Beam Deposition Approaches", 2023 Virtual MRS Fall Meeting & Exhibit , Dec. 5-7, 2023 (Poster, Dec. 7, 2023)
  3. X. Jia, K. Narita, K. Ota, A. Takahashi, R. Yamamoto,  A. Hiraiwa,T. Fujishima, H. Kawarada, "Reliable Formation of Diamond p-type Channel by Additional Negative Ions Formed from Corona Discharge", 2023 Virtual MRS Fall Meeting & Exhibit, Dec. 5-7, 2023 (Poster, Dec. 7, 2023)
  4. Y.Hashimoto, C.Wakabayashi, Y.Takahashi, Y.Takano, M.Tachiki, S.Ooi, H. Kawarada,"Reduction of Etching Damage and SQUID Operation of Single-Crystalline Diamond Josephson Junctions by Ridge Conduction Structure", 2023 MRS Fall Meeting &Exhibit, Boston, USA, Nov 26-Dec 1, 2023. (Oral, Nov. 27, 2023)
  5. Yukihiro Chou, Fuga Asai, Kosuke Ota, Atsushi Hiraiwa, Yoshiki Nishibayashi, Hiroshi Kawarada, “MOSFETs on (111) Highly Oriented Polycrystalline 1-Inch Diamond Substrate", 2023 MRS Fall Meeting & Exhibit, Boston, USA, Nov. 26-Dec. 1, 2023(Oral, Nov. 28 2023)
  6. Y. Asano, K. Hayasaka, M. Ueda, K. Kimura, T. Tanii, S. Onoda, S. Enomoto, H. Kawarada,"The Highest Concentration NV Ensembles Formed by Heavily Nitrogen-Doping CVD System with Plasma Confinement and High Density Vacancy Formation by Focused Electron Beam Irradiation",2023 MRS Fall Meeting & Exhibit, Boston, USA, Nov. 27-Dec. 1, 2023(Oral, Nov. 30 2023)
  7. K.Masadome, H. Sato, R. Nomoto, Y. Chang, H. Kawarada, "Propagation of Potentiometric Signals Based on Electric Conduction of Sea Water",2023 IEEE International Symposium on Antennas and Propagation, (ISAP 2023) Kuala Lumpur,Malaysia, Oct. 30-Nov. 2, 2023 (Oral, Nov. 1, 2023)
  8. M. Ueda, Y. Asano, K. Abe, Y. Sato, S. Takeuchi, H. Kawarada,” Fabrication of NV Center by Chamber Flame Synthesis,” 3rd International Symposium on Design & Engineering by Joint Inverse Innovation for Materials Architecture(DEJl²MA 2023), International Conference Center – Waseda University, Tokyo, Japan, Oct. 20, 2023 (Poster)
  9. C. Wakabayashi, Y. Hashimoto, M. Takeuchi, S. Ooi, M. Tachiki, Y. Takano, H.Kawarada, “Supercurrent modulation in superconducting boron-doped diamond thin films by field effect,” 3rd International Symposium on Design & Engineering by Joint Inverse Innovation for Materials Architecture(DEJl²MA 2023), International Conference Center – Waseda University, Tokyo, Japan, Oct. 20, 2023 (Poster)
  10. R. Nomoto, H. Sato, Y. H.Chang, H. Kawarada, “Realization of multi-sensing using multiple ion-sensitive FETs by common gate method,” 3rd International Symposium on Design & Engineering by Joint Inverse Innovation for Materials Architecture(DEJl²MA 2023), International Conference Center – Waseda University, Tokyo, Japan, Oct. 20, 2023 (Poster)
  11. A. Takahashi, M. Arai, F. Asai, Y. Suzuki, A Hiraiwa, H. Kawarada, “Improved Characteristics of 2DHG Diamond MOSFETs in Gate Width Expansion with Introduction of Multi-Finger Structure,” 3rd International Symposium on Design & Engineering by Joint Inverse Innovation for Materials Architecture(DEJl²MA 2023), International Conference Center – Waseda University, Tokyo, Japan, Oct. 20, 2023 (Poster)
  12. K. Masadome, H. Sato, R. Nomoto, Y. H. Chang, H. Kawarada, “Principle of underwater wireless communication in seawater utilizing potentiometric signals and achievement of 10 Mbps”3rd International Symposium on Design & Engineering by Joint Inverse Innovation for Materials Architecture(DEJl²MA 2023), International Conference Center – Waseda University, Tokyo, Japan, Oct. 20, 2023 (Poster)
  13. H. Kawarada, "Diamond p-FETs platform for wide bandgap n-FET," 3rd International Conference on Semiconductor Materials and Technology(ICOSEMT 2023), Penang, Malaysia, Sept. 18-19, 2023（Keynote Speech, Sept. 18, 2023）
  14. X. Jia, Y. Suzuki, S. Deguchi, F. Asai, A. Takahashi, A. Hiraiwa, J. Kaneko, H. Kawarada, "Radiation Effects on 2DHG Diamond MOSFETs with Boron-doped Source and Drain Layers", 2023 International Conference on Solid State Devices and Materials, Nagoya, Japan, Sept. 5-8, 2023 (Oral, Sept. 8, 2023)
  15. K. Narita, K. Ota, Y. Fu, C. Wakabayashi, A. Hiraiwa, H. Kawarada, "Normally-Off Operation in Vertical Diamond MOSFETs Using Oxidized Si Termination Diamond Channel Formed by Si Molecular Beam Deposition Approaches," 2023 International Conference on Solid State Devices and Materials, Nagoya, Japan, Sept. 5-8, 2023 (Oral, Sept. 8, 2023)
  16. Y. Asano, K. Hayasaka, M. Ueda, K. Kimura,  T. Tanii,  S. Onoda,  S. Enomoto,  H. Kawarada,  "The high concentration NV ensemble formed from heavily nitrogen-doped CVD diamond with high quality," 2023 International Conference on Solid State Devices and Materials, Nagoya, Japan, Sept. 5-8, 2023 (Oral, Sept.6, 2023)
  17. H. Kawarada, "C-Si-O diamond FET with best normally off operation due to low surface state density," The 73rd Diamond Research Conference, University of Warwick, Warwick, UK, July 10-13, 2023 (Invited, Keynote Speech, July 11, 2023)
  18. H.Kawarada, “Oxidized silicon terminated diamond FETs operated as deep normally-off without deteriorating drain current density", Hasselt Diamond Workshop 2023 - SBDD XXVII, Hasselt, Belgium, March 15-17, 2023 (Invited, March 15, 2023)
  19. R. Nomoto, H. Sato, Y. H. Chang, H. Kawarada, "Multi-Sensing Utilizing Common-Gate Ion-Sensitive FETs", Design & Engineering by Joint Inverse Innovation for Materials Architecture, Waseda Univ., Tokyo, Mar. 11, 2023 (Poster)
  20. C. Wakabayashi, Y. Takano, M. Tachiki, S. Ooi, S. Arisawa, M. Sasagawa, H. Kawarada, "Low Temperature Operation of 2DHG Diamond FETs with Superconducting Diamond Sources and Drains aiming at JoFET or SCFET operation", Design & Engineering by Joint Inverse Innovation for Materials Architecture(DEJI2MA), Waseda Univ., Tokyo, Mar. 11, 2023 (Poster)
  21. K. Hayasaja, K. Kanehisa, M. Ueda, K. Kimura, S. Onoda, H.Kawarada, "Highly concentrated NV ensembles produced by vacancy formation using transmission electron microscopy.", Design & Engineering by Joint Inverse Innovation for Materials Architecture(DEJI2MA), Waseda Univ., Tokyo, Mar. 11, 2023 (Poster)
  22. A. Takahashi, M. Arai, F. Asai, Y. Suzuki, A. Hiraiwa, H.Kawarada, "2DHG diamond MOSFETs with multi-finger structure for gate width expansion and improved RF characteristics", Design & Engineering by Joint Inverse Innovation for Materials Architecture(DEJI2MA), Waseda Univ., Tokyo, Mar. 11, 2023 (Poster)
  23. M. Ueda, K. Hayasaka, K. Kanehisa, Y. Takahashi, C. Wakabayashi, T. Kageura  H. Kawarada, "Characterization of Ultra High-Concentration Nitrogen-doped CVD Diamond", Design & Engineering by Joint Inverse Innovation for Materials Architecture(DEJI2MA), Waseda Univ., Tokyo, Mar. 11, 2023 (Poster)
  24. K. Ota, Y. Fu, K. Narita, C. Wakabayashi, A. Hiraiwa, H. Kawarada, "Achievement of the first normally-off operation in vertical diamond MOSFETs using oxidized Si termination diamond channel," Design & Engineering by Joint Inverse Innovation for Materials Architecture(DEJI2MA), Waseda Univ., Tokyo, Mar. 11, 2023 (Poster)