WASEDA UNIVERSITY
            
 
 
 

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2013年

国際学会

New Diamond and Nanocarbon conference (NDNC2013), Singapore, May 2013 ...[1 Paper]

1) Y. Shintani, M. Myodo , S. Ibori , H. Kawarada, “Study of differential FET sensing utilizing termination-controlled diamond surfaces as pH-sensitive/pH-insensitive interfaces”

NT13: The Fourteenth International Conference on the Science and Application of Nanotubes, Espoo, Finland, Jun. 2013 ...[1 Paper]

2) M. Inaba, M. Shibuya, Y. Masuda, A. Hiraiwa, M. Kusunoki, H. Kawarada,"Estimation of conduction at CNT/SiC interface of vertically aligned and high density CNT on SiC"

1st French-Japanese Workshop on Diamond power devices, Chamonix, France, 19-21 June 2013 ... [2 Papers]

3) A. Hiraiwa, "High-reliability ALD-Al2O3 gate insulator for diamond 2DHG-FETs"

4) H. Kawarada, "C-H bonded diamond MOS Field Effect Transistor for High Temperature and High Power Application" (invited)

The 6th International Conference on Sensors (AsiaSense 2013), Melaka, Malaysia, 27-29 Aug 2013 ... [1 Paper]

5) H. Kawarada, "Diamond Solution-Gate Transistors for Protein Detection by DNA/RNA Aptamers" (invited)

International Conference on Diamond and Carbon Materials, Riva del Garda, Italy, 2-5 Sep. 2013 ... [4 Papers]

6) M. Inaba, M. Shibuya, Y. Masuda, A. Hiraiwa, M. Kusunoki, H.Kawarada,"Evaluation of CNT forest/metal contact resistivity for LSI metallization application"

7) H.Tsuboi, T.Naruo, A.Daicho, T.Saito, A.Hiraiwa, H.Kawarada, "400°C operation of hydrogen-terminated diamond MOSFETs with high temperature ALD Al2O3 for gate insulator and passivation"

8) A. Hiraiwa, W. Ono, T. Hakamata, Y. Yokoyama, D. Utsunomiya, and H. Kawarada, "Surface conduction after molecular beam epitaxy of AlN on a 2x1 4clean (111) diamond surface"

9) A. Hiraiwa, T. Saito, A. Daicho, H. Tsuboi, T. Naruo, Y. Nozaki, and H. Kawarada, "High-voltage environment-resistive gate insulator for diamond field-effect transistors with two-dimensional hole gas"

2013 JSAP(Japan Society of Applied Physics) -MRS(Materials Research Society) Joint Symposia, Kyoto, Japan, 16-20 Sep. 2013 ... [7 Papers]

10) T. Hakamata, Y. Yokoyama, W. Ono, D. Utsunomiya, A. Hiraiwa and H. Kawarada, "AlN heteroepitaxial growth on diamond (111) 2x1 reconstructed surface by molecular beam epitaxy (MBE)"

11) W. Ono, Y. Yokoyama, R. Kanomota, D. Utsunomiya, T. Hakamata, A. Hiraiwa and H. Kawarada, "Electric Property of Al-first AlN/Diamond Interface Formed by Molecular Beam Epitaxy"

12) M. Myodo, K. Oohara, M. Inaba, M. Kobayashi, Y. Shintani, A. Hiraiwa, H. Kawarada, "Electrolyte solutiongate FET by mm-long carbon nanotube forest sheet"

13) T. Saito, A. Daicho, A. Hiraiwa, and H. Kawarada, "High-electrical-insulation ALD-Al2O3 for creation and passivation of two-dimensional hole gas on H-terminated diamond surface"

14) M. Koga, T. Kageura, Khairul. Ishak, Y. Shintani, M . Hasegawa, A.Hiraiwa, H. Kawarada, “Fabrication of P-type transparent conducting films using by heavily boron-doped nano crystalline diamond”

15) M. Shibuya, M. Inaba, K. Suzuki, Y. Masuda, A. Hiraiwa, M. Kusunoki, H. Kawarada, "Evaluation of conduction at CNT/SiC interface of vertically aligned and high density CNT on SiC"

16) Hiroshi Kawarada, "H-terminated Diamond Field Effect Transistors Operated at 400C"  (invited)

ECS 224th meeting, San Francisco, Oct. 2013 ... [1 Paper]

17) Y. Shintani, M. Myodo, M. Kobayashi, S. Ibori, H. Kawarada "The I-V characteristics of a termination-controlled polycrystalline diamond field effect transistor pH sensor for using at harsh environment"

2013 MRS(Materials Research Society) Fall Meeting & Exhibit, Boston, MA, USA, 1-6 Dec. 2013 ... [9 Papers]

18) C.Y. Lee, M. Inaba, K Suzuki, M. Shibuya, A. Hiraiwa, M. Kusunoki, H. Kawarada, "Lateral Conductivity of CNT Film on High Resistance Sic Substrate"

19) H.Tsuboi, T.Naruo, A.Daicho, T.Saito, D.Xu, T.Yamada, K.Kuruma, A.Hiraiwa, H.Kawarada,"400°C operation and high breakdown characteristic of hydrogen-terminated diamond MOSFETs with Al2O3 passivation"

20) M. Shibuya, M. Inaba, K. Suzuki, Y. Masuda, A. Hiraiwa, M. Kusunoki, H. Kawarada, "The dependence of contact resistivity at CNT/SiC interface on SiC doping concentration: CNT new application for SiC power devices"

21) W. Ono, Y. Yokoyama, D. Utsunomiya, T. Hakamata, A. Hiraiwa, H.Kawarada,"Anomalous Electric Conduction at Al-first AlN/Diamond Interface Formed by Molecular Beam Epitaxy"

22) M. Myodo, M. Inaba, M. Kobayashi, Y. Shintani, A. Hiraiwa, H. Kawarada, "Electrolyte surrounding-gate FET by mm-long and dense carbon nanotube forest sheet"

23) M. Koga, T. Kageura, K. Ishak, Y. Shintani, M. Hasegawa, A. Hiraiwa and H. Kawarada, “The optimization of P-type transparent electrode using boron-doped nanodiamond”

24) T. Saito*, K. Kuruma, A. Daicho, A. Hiraiwa, and H. Kawarada,"Revolutionarily enhanced dielectric strength of an ALD-Al2O3 film annealed at a high temperature"

25) T. Hakamata, W. Ono, Y. Yokoyama, D. Utsunomiya, Y. Seshimo, A. Hiraiwa, H. Kawarada、"AlN Heteroepitaxial Growth on Diamond (111) 2x1 Reconstructed Surface by Molecular Beam Epitaxy (MBE)"

26) T. Hakamata, Y. Seshimo, W. Ono, Y. Yokoyama, D. Utsunomiya, A. Hiraiwa, H. Kawarada, "Thermal Stability of Diamond Surface C-H Bonds"