WASEDA UNIVERSITY
              
 
 
 

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1995年

  1. M. Katoh; H. Kawarada, "Heteroepitaxial growth of tungsten carbide films on W(110) by plasma-enhanced chemical vapor deposition", Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 34(7 A), 3628-3630, (1995 Jul)
  2. Tsuyoshi Suesada; Naofumi Nakamura; Hiroyuki Nagasawa; Hiroshi Kawarada, "Initial growth of heteroepitaxial diamond on Si(001) substrates via β-SiC buffer layer", Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 1995;34(9 A), 4898-4904 (1995 Sep)
  3. M. Itoh; H. Kawarada, "Fabrication and characterization of metal-semiconductor field-effect transistor utilizing diamond surface-conductive layer", Japanese Journal of Applied Physics,  1995;34(9 A):4677-4681 (1995 Sep)
  4. S. C. Lawson; H. Kanda; H. Kiyota; T. Tsutsumi; H. Kawarada, "Cathodoluminescence from high-pressure synthetic and chemical-vapor- deposited diamond", Journal of Applied Physics. 1995;77(4):1729-1734 (DOI: 10.1063/1.358865)
  5. H. Kawarada, H. Sasaki, A. Satoh "Scanning-tunneling-microscope observation of the homoepitaxial diamond(001) 2×1 reconstruction observed under atmospheric pressure", Phys. Rev. B, 52(15), 11351-11358 (1995) (DOI: 10.1103/PhysRevB.52.11351)
  6. H. Kawarada; T. Suesada; H. Nagasawa, "Heteroepitaxial growth of smooth and continuous diamond thin films on silicon substrates via high quality silicon carbide buffer layers", Applied Physics Letters. 66(5):583-585, 30 January 1995 (DOI:org/10.1063/1.114020)