WASEDA UNIVERSITY
              
 
 
 

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1997年

1) Y. Mizuochi, H. Nagasawa, H. Kawarada "Surface characterization of smooth heteroepitaxial diamond layers on beta-SiC (001)", Diam. Relat. Mater., 6, 277 (1997)

2) A. Hokazono, T. Ishikura, K. Nakamura, S. Yamashita, H. Kawarada "Enhancement/depletion MESFETs of diamond and their logic circuits", Diam. Relat. Mater., 6, 339 (1997)

3) H. Noda, A. Hokazono, H. Kawarada "Device modeling of high performance diamond MESFETs using p-type surface semiconductive layers", Diam. Relat. Mater., 6, 865 (1997)

4) H. Kawarada, C. Wild, N. Herres, R. Locher, P. Koidl, H. Nagasawa "Heteroepitaxial growth of highly oriented diamond on cubic silicon carbide", J. Appl. Phys., 81, 3490 (1997)

5) T. Murakami, K. Nakamura, S. Yamashita, S. Takeuchi, M. Murakawa, H.Kawarada "Comparative study of excitonic recombination radiation from diamonds grown by CVD and HP/HT methods", Diam. Relat. Mat., 6, 1668 (1997)

6) A. Hokazono, H. Kawarada "Enhancement/depletion surface channel field effect transistors of diamond and their logic circuits", Jpn. J. Appl. Phys., Part 1, 36, 7133 (1997)