WASEDA UNIVERSITY
              
 
 
 

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1996年

  1. H. Kawarada, “Hydrogen-terminated diamond surfaces and interfaces”, Surface Science Reports. 26(7), 205-259 (1996 Dec) (DOI: 10.1016/S0167-5729(97)80002-7)
  2. H. Kawarada, M. Itoh,  A. Hokazono, “Electrically isolated metal-semiconductor field effect transistors and logic circuits on homoepitaxial diamonds”, Japanese Journal of Applied Physics, 35(9B), L1165-L1168 (1996)
  3. K. W. Wong, S. T. Lee, R. W. M. Kwok, Y. W. Lam. H. Kawarada, “Electron affinity and surface re-ordering of homoepitaxial diamond (100)”, Japanese Journal of Applied Physics, 35(10), 5444-5447, (1996)
  4. H. Kawarada, M.Itoh, A. Hokazono "Electrically isolated metal-semiconductor field effect transistors and logic circuits on homoepitaxial diamonds", ,Jpn. J. Appl. Phys., Part 2, 35, L1165 (1996)
  5. J. Imamura, T. Tsutsumi, T. Murakami, H. Kawarada, S. Takeuchi, M. Murakawa "Observation of dominant free exciton recombination from synthesized diamond by cathodoluminescence measurement", Silicon Carbide and Related Material 1995, Proceedings of the 6th International Conference, 1087 (1996)
  6. N. Jin, H. Sakai, K. Tsugawa, H. Kawarada "Device modeling of enhancement-mode diamond MESFET utilizing p-type surface semiconductive layers", Silicon Carbide and Related Materials 1995,. Proceedings of the 6th International Conference, 1091 (1996)
  7. M.Itoh, A. Hokazono, H. Noda, H. Kawarada "Fabrication of logic circuits using diamond metal-semiconductor field-effect-transistor", Silicon Carbide and Related Materials 1995, Proceedings of the 6th International Conference, 1095 (1996)
  8. H. Kawarada "Hydrogen-terminated diamond surfaces and interfaces", Surf. Sci. Rep., 26, 205 (1996)