WASEDA UNIVERSITY
              
 
 
 

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1999年

1) A.Hokazono, K.Tsugawa, H.Umezawa, K.Kitatani, H.Kawarada "Surface p-Channel Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Hydrogen-Terminated (001) Surfaces of Diamond", Solid State Electron., 43(8), 1465-1471 (Aug.1999)

2) K. Tsugawa, K. Kitatani, H. Noda, A. Hokazono, K. Hirose, M. Tajima, H. Kawarada "High-Performance Diamond Surface-Channel Field-Effect Transistors and Their Operation Mechanism", Diam. Relat. Mater., 8(2-5), 927-933 (Mar.1999)

3) K. Kitatani, H. Umezawa, K. Tsugawa, K. Ueyama, T. Ishikura, S. Yamashita, H. Kawarada "MOSFETs on Polished Surfaces of Polycrystalline Diamond", Diam. Relat. Mater., 8(10), 1831-1833 (Oct.1999)

4) H. Umezawa, K. Tsugawa, S. Yamanaka, D. Takeuchi, H. Okushi, H. Kawarada, "High-Performance Diamond Metal-Semiconductor Field-Effect Transistor with 1 μm Gate Length", Jpn. J. Appl. Phys., 38(11A), L1222 -L1224 (Nov.1999)

5) Atsushi Sato, Kenji Tanabe, Shinichi Egawa, Toshiki Tsubota, Seiji Morooka, Junichi Hojyo, Hideaki Maeda, Hiroshi Kawarada, "Cathodoluminescence of  hosphorus-Doped {111} Homoepitaxial Diamond Thin Films",New Diamond and Frontier Carbon Technology, 9(2):123-125(1999)

6) Kazuo Tsugawa, Hiroshi Kawarada,"Device Simulations of Diamond Surface-Channel MESFETs", New Diamond and Frontier Carbon Technology,  9(2):154-155(1999)

7) Kazutoshi Morita; Kazuo Tsugawa; Yousuke Yamamoto; Hiroshi Kawarada,"Cluster Calculations of Diamond-SiC Interface Structures",New Diamond and Frontier Carbon Technology, 9(2):157 (1999)

8) Hitoshi Umezawa; Kenich Kitatani; Kengo Kinumura; Nobuyuki Seto; Kazuo Tsugawa; Hiroshi Kawarada,"Fabrication of 1 μm Gate Diamond FET Using Self-Aligned Gate Process"New Diamond and Frontier Carbon Technology,9(2):151-153(1999)